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PDF PBLS2003S Data sheet ( Hoja de datos )
| Número de pieza | PBLS2003S | |
| Descripción | 20 V PNP BISS loadswitch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PBLS2003S
20 V PNP BISS loadswitch
Rev. 01 — 3 August 2006
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)
plastic package.
www.DataSheet4U.com 1.2
Features
I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat (BISS) transistor
VCEO
collector-emitter voltage open base
IC collector current
RCEsat
collector-emitter saturation IC = −2 A;
resistance
IB = −200 mA
TR2; NPN resistor-equipped transistor
-
-
[1] -
- −20 V
- −3 A
75 120 mΩ
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
7 10 13 kΩ
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
Philips Semiconductors
PBLS2003S
20 V PNP BISS loadswitch
103
Zth(j-a)
(K/W)
duty cycle =
102
10
1
www.DataSheet4U.com
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa809
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa810
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
PBLS2003S_1
Product data sheet
Rev. 01 — 3 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
8. Test information
PBLS2003S
20 V PNP BISS loadswitch
−IB
90 %
www.DataSheet4U.com
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td tr
t on
Fig 17. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
IC = −2 A; IBon = −100 mA; IBoff = 100 mA; R1 = open; R2 = 25 Ω; RB = 70 Ω; RC = 5 Ω
Fig 18. Test circuit for switching times
PBLS2003S_1
Product data sheet
Rev. 01 — 3 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PBLS2003S.PDF ] | |
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