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Datasheet VE2100M1ETR050053 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VE2100M1ETR050053 | Aluminum Electrolytic Capacitor ALUMINUM ELECTROLYTIC CAPACITORS VE2 Series: Surface Mount Type, Low Profile
FEATURES
•85°C, 2000 hours assured •5.5 mm, maximum height •Replaces SME and RV2 Series •RoHS Compliant
SPECIFICATIONS
Item Operating Temp. Range Capacitance Tolerance Leakage Current (at 20• |  RFE international | capacitor |
VE2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VE2100M1ETR050053 | Aluminum Electrolytic Capacitor ALUMINUM ELECTROLYTIC CAPACITORS VE2 Series: Surface Mount Type, Low Profile
FEATURES
•85°C, 2000 hours assured •5.5 mm, maximum height •Replaces SME and RV2 Series •RoHS Compliant
SPECIFICATIONS
Item Operating Temp. Range Capacitance Tolerance Leakage Current (at 20• RFE international capacitor | | |
| 2 | VE24 | Zinc Oxide Varistors Zinc Oxide Varistors
VE 07/09/13/17/24
FEATURES
• Radial lead varistors • Wide operating voltage range from 14 V to 625 V (Vrms for VE types) or 22 V to 1000 V (V1mA for VF types) • Available in tape and reel for use with automatic insertion equipment (see pages 31 to 33 for details).
30 (1.18  AVX Corporation varistor | | |
| 3 | VE27 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | VE27 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | VE28 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | VE28 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | VE28F008 | 8 MBIT (1 MBIT x 8) FLASH MEMORY VE28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Avionics Temperature Range b 40 C to a 125 C Extended Cycling Capability 10K Block Erase Cycles 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase Command User Inte  Intel Corporation data | |
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