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부품번호 | KHB1D0N60D 기능 |
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기능 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
전체 6 페이지수
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 1.0A
Drain-Source ON Resistance :
RDS(ON)=12 @VGS = 10V
Qg(typ.) = 5.9nC
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
www.DataSheet4U.com
A
C
K
Q
H
FF
123
D
I
J
DIM MILLIMETERS
A 6.6 +_ 0.2
B 6.1 +_0.2
C 5.34 +_ 0.3
D 0.7 +_0.2
B E 2.7 +_ 0.2
F 2.3 +_0.2
EM
P
H 0.96 MAX
I 2.3 +_ 0.1
J 0.5 +_ 0.1
OK
1.5
L 0.5 +_ 0.1
M 0.8 +_ 0.1
L O 0.55 MIN
P 1.02+_ 0.2
Q 0.8+_ 0.2
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
1.0 1.0*
0.57 0.57*
3.0 3.0*
50
2.8
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Ta=25
Derate above 25
PD
28
0.22
28 W
0.22 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
4.53
4.53 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
50
110
50 /W
110 /W
* : Drain current limited by maximum junction temperature.
DPAK
A
C
O
N
H
G
FF
123
I
J
D
B
K
E
M
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_ 0.2
B 6.1+_ 0.2
C 5.34+_0.3
D 0.7+_ 0.2
E 9.3 +_0.3
F 2.3 +_0.2
G 0.76+_ 0.1
H 0.96 MAX
I 2.3+_ 0.1
J 0.5+_ 0.1
K 1.8+_ 0.2
L 0.5 +_ 0.1
M 1.02 +_ 0.3
N 1.0 +_ 0.1
O 1.5
IPAK-S
D
G
2005. 10. 24
Revision No : 1
S
1/6
KHB1D0N60D/I
www.DataSheet4U.com
300
200
100
0
10-1
C - VDS
Frequency = 1MHz
Ciss
Coss
Crss
100 101
Drain - Source Voltage VDS (V)
1.0
0.8
0.6
0.4
0.2
0.0
25
ID - Tj
50 75 100 125
Junction Temperature Tj ( C)
150
Rth
Qg - VGS
12
ID=1.0A
10
VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
0
012345
Gate - Charge Qg (nC)
6
7
Safe Operation Area
101
Operation in this
area is limited by RDS(ON)
100µs
100
1µs
10µs
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
10-1 100
101
DC
102
Drain - Source Voltage VDS (V)
2005. 10. 24
Duty=0.5
100
0.2
0.1
10-1
0.05
0.02
0.01 Single Pulse
10-2
10-5
10-4
PDM
t1
t2
10-3 10-2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
Square Wave Pulse Duration (sec)
101
Revision No : 1
4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
KHB1D0N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KHB1D0N60I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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