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PDF BAS21VD Data sheet ( Hoja de datos )
| Número de pieza | BAS21VD | |
| Descripción | High-voltage switching diode array | |
| Fabricantes | NXP Semiconductors | |
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BAS21VD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: trr ≤ 50 ns
• Low capacitance: Cd ≤ 5 pF
• Reverse voltage: VR ≤ 200 V
• AEC-Q101 qualified
• Repetitive peak reverse voltage: VRRM ≤ 250 V
• Repetitive peak forward current: IFRM ≤ 1 A
• Small SMD plastic package
3. Applications
• High-voltage switching in surface-mounted circuits
• Automotive
• Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
VR reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 200 V
- 25 100 nA
- 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
300
VR
(V)
200
mle167
BAS21VD
High-voltage switching diodes
300
IF
(mA)
200
mbg442
100 100
0
0 50 100 150 200
Tamb (°C)
FR4 PCB, standard footprint
Fig. 5. Reverse voltage as a function of ambient
temperature; derating curve
0
0
100
Tamb (°C)
200
FR4 PCB, standard footprint
Fig. 6. Forward current as a function of ambient
temperature; derating curve
11. Test information
RS = 50 Ω
V = VR + IF × RS
(1) IR = 3 mA
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
Fig. 7. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAS21VD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© NXP N.V. 2013. All rights reserved
5 / 11
5 Page 
NXP Semiconductors
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................3
10 Characteristics ....................................................... 3
11 Test information ..................................................... 5
11.1 Quality information ............................................... 5
12 Package outline ..................................................... 6
13 Soldering ................................................................ 6
14 Revision history ..................................................... 8
15 Legal information ...................................................9
15.1 Data sheet status ................................................. 9
15.2 Definitions .............................................................9
15.3 Disclaimers ...........................................................9
15.4 Trademarks ........................................................ 10
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 August 2013
BAS21VD
High-voltage switching diodes
BAS21VD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© NXP N.V. 2013. All rights reserved
11 / 11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BAS21VD.PDF ] | |
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