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Datasheet K1B3216BDD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K1B3216BDD | 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1
Revised - Corrected the name of 9th row of balls on the pakage to ’J� |  Samsung Semiconductor | transistor |
| 2 | K1B3216BDD | 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1
Revised - Corrected the name of 9th row of balls on |  SAMSUNG ELECTRONICS | transistor |
K1B Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K1B3216BDD | 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1
Revised - Corrected the name of 9th row of balls on the pakage to ’J� Samsung Semiconductor transistor | | |
| 2 | K1B3216BDD | 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1
Revised - Corrected the name of 9th row of balls on SAMSUNG ELECTRONICS transistor | | |
| 3 | K1B5616BAM | 256Mb (16M x 16 bit) UtRAM K1B5616BA(B)M
Preliminary UtRAM
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR  Samsung Electronics data | | |
| 4 | K1B5616BBM | 256Mb (16M x 16 bit) UtRAM K1B5616BA(B)M
Preliminary UtRAM
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR Samsung Electronics data | | |
| 5 | K1B6416B6C | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory K1B6416B6C
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C  Samsung semiconductor transistor | |
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