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PBLS2003D 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PBLS2003D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 PBLS2003D 자료 제공

부품번호 PBLS2003D 기능
기능 60V PNP BISS loadswitch
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


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PBLS2003D 데이터시트, 핀배열, 회로
PBLS2003D
20 V PNP BISS loadswitch
Rev. 01 — 24 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = 1 A;
resistance
IB = 100 mA
TR2; NPN resistor-equipped transistor
-
-
[1] -
- 20 V
- 1 A
185 280 m
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
7 10 13 k
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp 300 µs; δ ≤ 0.02.




PBLS2003D pdf, 반도체, 판매, 대치품
Philips Semiconductors
PBLS2003D
www.DataSheet4U.com
20 V PNP BISS loadswitch
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 315 K/W
[2] - - 236 K/W
[3] - - 210 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
006aaa415
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
PBLS2003D_1
Product data sheet
Rev. 01— 24 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PBLS2003D 전자부품, 판매, 대치품
Philips Semiconductors
Table 7: Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 10 mA
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
PBLS2003D
www.DataSheet4U.com
20 V PNP BISS loadswitch
Min Typ Max Unit
--
--
--
--
30 -
--
- 1.1
2.5 1.8
7 10
0.8 1
--
100 nA
1 µA
50 µA
400 µA
-
150 mV
0.8 V
-V
13 k
1.2
2.5 pF
PBLS2003D_1
Product data sheet
Rev. 01— 24 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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