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부품번호 | BD3538HFN 기능 |
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기능 | Termination Regulators | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 20 페이지수
Datasheet
Termination Regulators for DDR-SDRAMs
BD3538F BD3538HFN
General Description
BD3538F/HFN is a termination regulator that complies
with JEDEC requirements for DDR-SDRAM. This
linear power supply uses a built-in N-channel MOSFET
and high-speed OP-AMPS specially designed to
provide excellent transient response. It has a
sink/source current capability of up to 1A and has a
power supply bias requirements of 3.3V to 5.0V for
driving the N-channel MOSFET. By employing an
independent reference voltage input (VDDQ) and a
feedback pin (VTTS), this termination regulator
provides excellent output voltage accuracy and load
regulation as required by JEDEC standards.
Additionally, BD3538 has a reference power supply
output (VREF) for DDR-SDRAM or a memory
controller. Unlike the VTT output that goes to “Hi-Z”
state, the VREF output is kept unchanged when EN
input is changed to “Low”, making this IC suitable for
DDR-SDRAM under “Self Refresh” state.
Features
Incorporates a push-pull power supply for
termination (VTT)
Incorporates a reference voltage circuit (VREF)
Incorporates an enabler
Incorporates an undervoltage lockout (UVLO)
Incorporates a thermal shutdown protector (TSD)
Compatible with Dual Channel (DDR-II)
Key Specifications
Termination Input Voltage Range:
1.0V to 5.5V
VCC Input Voltage Range:
2.7V to 5.5V
VDDQ Reference Voltage Range: 1.0V to 2.75V
Output Voltage:
1/2 x VVDDQ V(Typ)
Output Current:
1.0A (Max)
High side FET O-Resistance:
0.4Ω(Typ)
Low side FET ON-Resistance:
0.4Ω(Typ)
Standby Current:
0.5mA (Typ)
Operating Temperature Range: -40°C to +105°C
Packages
W(Typ) x D(Typ) x H(Max)
SOP8
5.00mm x 6.20mm x 1.71mm
Applications
Power supply for DDR I / II - SDRAM
HSON8
2.90mm x 3.00mm x 0.60mm
Typical Application Circuit, Block Diagram
VCC
VDDQ
VTT_IN
VCC
6
VCC
VDDQ
5
VCC
VCC
VTT_IN
7
Reference
Block
Thermal TSD
Protection
Enable
EN
2
EN
UVLO
SOFT
UVLO
TSD
EN
UVLO
TSD
VCC EN
UVLO
TSD
EN
UVLO
VTT
8
3
VTTS
4
VREF
VTT
½x
VDDQ
1
GND
○Product structure:Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/16
TSZ02201-0J2J0A900980-1-2
02.Nov.2015 Rev.001
BD3538F BD3538HFN
Electrical Characteristics
(Unless otherwise noted, Ta=25°C VCC=3.3V VEN=3V VVDDQ=1.8V VVTT_IN=1.8V)
Parameter
Symbol
Min
Limit
Typ
Max
Standby Current
Bias Current
[Enable]
IST - 0.5 1.0
ICC -
24
High Level Enable Input Voltage
Low Level Enable Input Voltage
Enable Pin Input Current
[Termination]
VENHIGH
VENLOW
IEN
2.3
-0.3
-
- 5.5
- +0.8
7 10
Termination Output Voltage 1
VVTT1
VVREF-30m
VVREF
VVREF+30
m
Termination Output Voltage 2
VVTT2
VVREF-30m
VVREF
VVREF+30
m
Source Current
Sink Current
Load Regulation
Line Regulation
Upper Side ON-Resistance 1
Lower Side ON-Resistance 1
Upper Side ON-Resistance 2
IVTT+
IVTT-
∆VVTT
Reg.l
RHRON1
RLRON1
RHRON2
1.0
-
-
-
-
-
-
--
- -1.0
- 50
20 40
0.45 0.9
0.45 0.9
0.4 0.8
Lower Side ON-Resistance 2
[Reference Voltage Input]
Input Impedance
Output Voltage 1
Output Voltage 2
Output Voltage 3
RLRON2
-
0.4
ZVDDQ
VVREF1
70
1/2 x VVDDQ
-18m
VVREF2
1/2 x VVDDQ
-40m
100
1/2 x
VVDDQ
1/2 x
VVDDQ
VVREF3
1/2 x VVDDQ
-25m
1/2 x
VVDDQ
Output Voltage 4
[UVLO]
Threshold Voltage
Hysteresis Voltage
(Note 9) No tested on outgoing inspection
VVREF4
1/2 x VVDDQ
-40m
1/2 x
VVDDQ
VUVLO
∆VUVLO
2.40
100
2.55
160
0.8
130
1/2 x
VVDDQ
+18m
1/2 x
VVDDQ
+40m
1/2 x
VVDDQ
+25m
1/2 x
VVDDQ
+40m
2.70
220
Unit Conditions
mA VEN=0V
mA VEN=3V
V
V
µA VEN=3V
V
IVTT=-1.0A to +1.0A
Ta=0°C to 105°C (Note 9)
VCC=5V, VVDDQ=2.5V
V
VVTT_IN=2.5V
IVTT=-1.0A to +1.0A
Ta=0°C to 105°C (Note 9)
A
A
mV IVTT=-1.0A to +1.0A
mV
Ω
Ω
Ω
VCC=5V, VVDDQ=2.5V
VVTT_IN=2.5V
Ω
VCC=5V, VVDDQ=2.5V
VVTT_IN=2.5V
kΩ
V
IREF=-5mA to +5mA
Ta=0°C to 105°C (Note 9)
V
IREF=-10mA to +10mA
Ta=0°C to 105°C (Note 9)
VCC=5V, VVDDQ=2.5V
V
VVTT_IN=2.5V
IVREF=-5mA to +5mA
Ta=0°C to 105°C (Note 9)
VCC=5V, VVDDQ=2.5V
V
VVTT_IN=2.5V
IVTT=-10mA to +10mA
Ta=0°C to 105°C (Note 9)
V VCC : sweep up
mV VCC : sweep down
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/16
TSZ02201-0J2J0A900980-1-2
02.Nov.2015 Rev.001
4페이지 BD3538F BD3538HFN
Typical Performance Curves
1.252
1.251
1.250
1.249
1.248
-10
-5 0
IVREF (mA)
5
10
Figure 9. Output Voltage vs IVREF
(DDR1)
1.260
1.255
1.250
1.245
1.240
-2
-1 0
1
Output CITurTre(Ant): IVTT (A)
2
Figure 11. Terminal Output Voltage vs Output Current
(DDR1)
IVREF (mA)
Figure 10. Output Voltage vs IVREF
(DDR2)
0.920
0.915
0.910
0.905
0.900
0.895
0.890
0.885
0.880
-2
-1 0 1
Output Current : IVTT (A)
2
Figure 12. Terminal Output Voltage vs Output Current
(DDR2)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7/16
TSZ02201-0J2J0A900980-1-2
02.Nov.2015 Rev.001
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BD3538HFN | Termination Regulators | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |