(PDF) BD302 Datasheet - Silicon PNP Power Transistor

Número de pieza	BD302
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor Company Limited
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No Preview Available ! INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification www.DataSheet4U.com BD302 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD301 APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER i.cnCollector-Base Voltage .iscsemCollector-Emitter Voltage Emitter-Base Voltage wwwCollector Current-Continuous VALUE UNIT -60 V -45 V -5 V -8 A ICM Collector Current-Peak -12 A IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 55 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.3 ℃/W isc Website：www.iscsemi.cn 1 page

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PDF BD302 Data sheet ( Hoja de datos )