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2SA1695
www.DataSheet4U.com
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SA1695
Unit
VCBO
–140
V
VCEO
–140
V
VEBO –6 V
IC –10 A
IB –4 A
PC
100(Tc=25°C)
W
Tj 150 °C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SA1695 Unit
ICBO
IEBO
VCB=–140V
VEB=–6V
–10max
–10max
µA
µA
V(BR)CEO
hFE
IC=–50mA
VCE=–4V, IC=–3A
–140min
50min∗
V
VCE(sat)
IC=–5A, IB=–0.5A
–0.5max
V
fT
VCE=–12V, IE=0.5A
20typ MHz
COB
VCB=–10V, f=1MHz
400typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
–60 12
–5 –10
5 –0.5
IB2 ton tstg tf
(A) (µs) (µs) (µs)
0.5 0.17typ 1.86typ 0.27typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–10
–400mA –300mA
–
200
mA
–1
5
0m
A
–8
–100mA
–75mA
–6
–50mA
–4
–25mA
–2
IB=–10mA
0
0 –1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–10
–8
–2
–6
–1
–5A
IC=–10A
0
0
–0.5
–1.0
–1.5
–2.0
Base Current IB(A)
–4
–2
0
0 –1 –1.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=–4V)
200
Typ
100
h FE– I C Temperature Characteristics (Typical)
(VCE=–4V)
200
125˚C
25˚C
100
–30˚C
50 50
θ j-a– t Characteristics
3
1
0.5
30
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10
30
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10
0.1
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
30
20
Typ
10
0
0.02
0.1 1
Emitter Current IE(A)
10
Safe Operating Area (Single Pulse)
–30
–10
–5 DC
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
–3
–5 –10
–50 –100
Collector-Emitter Voltage VCE(V)
–200
Pc–Ta Derating
100
50
3.5 Without Heatsink
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
29