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PDF K1S3216BCC Data sheet ( Hoja de datos )
| Número de pieza | K1S3216BCC | |
| Descripción | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
| Fabricantes | SAMSUNG Electronics | |
| Logotipo |  |
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K1S3216BCC
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
www.DataSheet4U.com
Revision History
Revision No. History
1.0
2.0 Revised
- Corrected tOH from 5ns to 3ns.
Draft Date
Remark
February 25, 2004 Final
September 20, 2004 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 2.0
September 2004
1 page  
K1S3216BCC
PRODUCT LIST
Part Name
K1S3216BCC-FI70
K1S3216BCC-FI85
Industrial Temperature Product(-40~85°C)
Function
48-FBGA, 70ns, 1.8/2.0V
48-FBGA, 85ns, 1.8/2.0V
UtRAM
www.DataSheet4U.com
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.23)
Typ
1.8/2.0
0
-
-
Max
2.1
0
Vcc+0.32)
0.4
Unit
V
V
V
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ1) Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 -
1 µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH,
VIN=VIL or VIH
-
-
- 5 mA
35 mA
Output low voltage
VOL IOL=2.1mA
- - 0.2 V
Output high voltage
Standby Current(CMOS)
VOH IOH=-1.0mA
ISB12) CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
1.4 -
-V
- - 100 µA
1. Typical values are tested at VCC=2.9V, TA=25°C and not guaranteed.
- 5 - Revision 2.0
September 2004
5 Page | ||
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