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부품번호 | DIM800DDS17-A000 기능 |
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기능 | Dual Switch IGBT Module | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• Lead Free construction
APPLICATIONS
• High Power Inverters
• Motor Controllers
DIM800DDS17-A000
Dual Switch IGBT Module
DS5844-1.0 June 2005 (LN23944)
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DDS17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DDS17-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/9
SEMICONDUCTOR
DIM800DDS17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Ices Collector cut-off current
VGE = OV, VCE = VCES
- - 1 mA
VGE = OV, VCE = VCES, Tcase = 125° C
-
- 25 mA
Ices Gate leakage current
VGE = ±20V, VCE = 0V
- - 4 µA
VGE(TH) Gate threshold voltage
IC = 40mA, VGE = VCE
4.5 5.5 6.5 V
V
CE(sat)
Collector-emitter saturation voltage VGE = 15V, IC = 800A
- 2.7 3.2 V
VGE = 15V, IC = 800A, Tcase = 125° C
-
3.4 4.0 V
IF Diode forward current
DC
- - 800 A
IFM Diode maximum forward current
tp = 1ms
- - 1600 A
V
F
Diode forward voltage
IF = 800A
- 2.2 2.5 V
IF = 800A, Tcase = 125° C
- 2.3 2.6 V
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
- 60 - nF
LM Module inductance
- - 20 - nH
RINT Internal transistor resistance
- - 0.27 - mΩ
SCData Short circuit. Isc
Tj = 125° C,Vcc = 900V,
tp ≤ 10µs,
VCE(max) = VCES - L* × di/dt
IEC 60747-9
I1 - 3700 -
I2 - 3200 -
A
A
Note:
¡ Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
4/9
4페이지 SEMICONDUCTOR
DIM800DDS17-A000
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
Fig.9 Diode reverse bias safe operating area
Fig.10 Transient thermal impedance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
7/9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ DIM800DDS17-A000.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DIM800DDS17-A000 | Dual Switch IGBT Module | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |