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PDF DIM2400ESM12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM2400ESM12-A000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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Replaces July 2002, version DS5536-2.1
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM2400ESM12-A000
www.DataSheet4U.com
DIM2400ESM12-A000
Single Switch IGBT Module
DS5529-3.0 March 2003
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
2400A
IC(PK)
(max)
4800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
I Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM2400ESM12-A000 is a single switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESM12-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
1 page  
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EO
Q
g
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
tr
EON
Qrr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM2400ESM12-A000
www.DataSheet4U.com
Test Conditions
IC = 2400A
V
GE
=
±15V
VCE = 600V
RG(ON) = RG(OFF) = 1Ω
L ~ 50nH
IF = 2400A, VR = 50% VCES,
dI /dt
F
=
9500A/µs
Min. Typ. Max. Units
- 1370 -
ns
- 230 - ns
- 520 - mJ
- 250 - ns
- 230 - ns
- 180 - mJ
- 26 - µC
- 310 - µC
- 1000 -
A
- 150 - mJ
Test Conditions
IC = 2400A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 1Ω
L ~ 50nH
IF = 2400A, VR = 50% VCES,
dIF/dt = 8500A/µs
Min. Typ. Max. Units
- 1570 -
ns
- 230 - ns
- 600 - mJ
- 360 - ns
- 290 - ns
- 200 - mJ
- 540 - µC
- 1260 -
A
- 260 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM2400ESM12-A000.PDF ] | |
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