BUJ103AD Datasheet PDF - NXP Semiconductors
| Part Number | BUJ103AD | |
| Description | Silicon diffused power transistor | |
| Manufacturers | NXP Semiconductors | |
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BUJ103AD
Silicon diffused power transistor
Rev. 2 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(D-PAK) surface mounted package.
1.2 Features and benefits
Low thermal resistance
Fast switching
1.3 Applications
Electronic lighting ballasts
Inverters
DC-to-DC converters
Motor control systems
1.4 Quick reference data
VCESM 700 V
Ptot 80 W
IC 4 A
hFEsat = 12.5 (typ)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
base
collector
emitter
mounting base; connected to collector
Simplified outline
mb
[1]
2
13
SOT428 (D-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.
Symbol
2
1
3
sym056
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NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
VIM
0
tp
T
VCC
RL
RB
DUT
001aab989
VIM = 6 V to +8 V; VCC = 250 V; tp = 20 s;
= tp/T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig 5. Test circuit for resistive load switching
IC
90 %
ICon
90 %
IB
ton
ts
toff
IBon
10 %
tf
t
10 %
tr ≤ 30 ns
−IBoff
t
001aab990
Fig 6. Switching times waveforms for resistive load
IC
ICon
90 %
VCC
IBon
VBB
LC
LB
DUT
001aab991
10 %
t
tf
ts
IB toff
IBon
t
Fig 7.
VCC = 300 V; VBB = 5 V; LC = 200 H; LB = 1 H.
Test circuit for inductive load switching
−IBoff
001aab992
Fig 8. Switching times waveforms for inductive load
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUJ103AD.PDF Datasheet ] | |
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