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Datasheet BUJ105AD Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BUJ105ADSilicon diffused power transistor

BUJ105AD Silicon diffused power transistor Rev. 01 — 14 December 2004 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features s Low the
NXP Semiconductors
NXP Semiconductors
transistor


BUJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BUJ100Silicon Diffused Power Transistor

DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in th
NXP Semiconductors
NXP Semiconductors
transistor
2BUJ100ATSilicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and s
NXP Semiconductors
NXP Semiconductors
transistor
3BUJ100LRSilicon diffused power transistor

BUJ100LR Silicon diffused power transistor Rev. 01 — 12 August 2009 Product data sheet www.DataSheet4U.c 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits „
NXP Semiconductors
NXP Semiconductors
transistor
4BUJ101ASilicon Diffused Power Transistor

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ101A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inve
NXP Semiconductors
NXP Semiconductors
transistor
5BUJ101AUSilicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, conver
NXP Semiconductors
NXP Semiconductors
transistor
6BUJ101AXSilicon Diffused Power Transistor

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ101AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, con
NXP Semiconductors
NXP Semiconductors
transistor
7BUJ103Silicon Diffused Power Transistor

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION BUJ103A High-voltage, high-speed planar-passivated npn power switching transistor
NXP Semiconductors
NXP Semiconductors
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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