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부품번호 | VNQ830P-E 기능 |
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기능 | QUAD CHANNEL HIGH SIDE DRIVER | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 21 페이지수
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VNQ830P-E
QUAD CHANNEL HIGH SIDE DRIVER
Table 1. General Features
TYPE
RDS(on)
IOUT
VNQ830P-E 65 mΩ (*) 6 A (*)
VCC
36 V
(*) Per each channel
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s PROTECTION AGAINST LOSS OF GROUND
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
TARGET SPECIFICATION
SO-28 (DOUBLE ISLAND)
DESCRIPTION
The VNQ830P-E is a quad HSD formed by
assembling two VND830-E chips in the same SO-
28 package. The VND830-E is a monolithic device
made by using| STMicroelectronics VIPower M0-3
Technology. The VNQ830P-E is intended for
driving any type of multiple loads with one side
connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload.
The device detects open load condition both in on
and off state. Output shorted to VCC is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Table 2. Order Codes
Package
SO-28
Tube
VNQ830P-E
Tape and Reel
VNQ830PTR-E
Note: (**) See application schematic at page 11.
October 2004
Rev. 1
1/21
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VNQ830P-E
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Figure 4. Current and Voltage Conventions
IS3,4
VCC3,4
IIN1
VIN1
ISTAT1
VSTAT1
IIN2
VIN2
ISTAT2
VSTAT2
VIN3
IIN3
ISTAT3
VSTAT3 IIN4
VIN4 ISTAT4
VSTAT4
VCC3,4 VCC1,2
IS1,2
VF1 (*)
VCC1,2
INPUT1
STATUS1
INPUT2
STATUS2
INPUT3
STATUS3
INPUT4
STATUS4
GND3,4
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
GND1,2
IOUT1
IOUT2
VOUT1
IOUT3
VOUT2
IOUT4 VOUT3
VOUT4
IGND3,4
IGND1,2
(*) VFn = VCCn - VOUTn during reverse battery condition
Table 4. Thermal Data (Per island)
Symbol
Rthj-case
Rthj-amb
Rthj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient (one chip ON)
Thermal resistance junction-ambient (two chips ON)
(MAX)
(MAX)
(MAX)
60 (1)
46 (1)
Value
15
44 (2)
31 (2)
Unit
°C/W
°C/W
°C/W
Note: 1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
Note: 2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
4/21
4페이지 Figure 5.
VwNwQw8.D3a0tPaS-hEeet4U.com
OPEN LOAD STATUS TIMING (with external pull-up)
VOUT > VOL
IOUT < IOL
VINn
VSTATn
tDOL(off)
tDOL(on)
OVER TEMP STATUS TIMING
VINn
Tj > TTSD
VSTATn
tSDL
tSDL
Figure 6. Switching time Waveforms
VOUTn
80%
dVOUT/dt(on)
VINn
td(on)
90%
10%
td(off)
dVOUT/dt(off)
t
t
7/21
7페이지 | |||
구 성 | 총 21 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VNQ830P-E | QUAD CHANNEL HIGH SIDE DRIVER | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |