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PDF IXTH50P10 Data sheet ( Hoja de datos )
| Número de pieza | IXTH50P10 | |
| Descripción | Standard Power MOSFET | |
| Fabricantes | IXYS | |
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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 50P10
IXTT 50P10
VDSS
ID25
RDS(on)
= -100 Vwww.DataSheet4U.com
= -50 A
= 55 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
(TO-247)
(TO-268)
Maximum Ratings
-100
-100
V
V
±20 V
±30 V
-50
-200
-50
A
A
A
30 mJ
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
VGS = -10 V, ID = 0.5 • ID25
-100
-3.0
TJ = 25°C
TJ = 125°C
V
-5.0 V
±100 nA
-25 µA
-1 mA
55 mΩ
TO-247 AD (IXTH)
D (TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (<5 nH)
- easy to drive and to protect
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2004 IXYS All rights reserved
DS98905D(10/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTH50P10.PDF ] | |
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