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PDF BD8313HFN Data sheet ( Hoja de datos )
| Número de pieza | BD8313HFN | |
| Descripción | 1.0A 1ch Synchronous Buck Converter Integrated MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
3.5V to 14V, 1.0A 1ch Synchronous Buck
Converter Integrated MOSFET
BD8313HFN
General Description
The BD8313HFN can produce stepped-down voltage
from a power supply composed of 4 batteries, which
can be Li2cell, Li3cell, etc., or from a 5V/12V fixed
power supply line. Output voltages include 1.2V, 1.8V,
3.3V, or 5.0V. This IC allows easy production of a
compact power supply since its high operating
frequency of 1.0MHz requires small-sized external
inductor and capacitor and the phase compensation
components are integrated in the chip. The built-in
synchronous rectification switches are capable of
withstanding 15V.
Features
Built-In Pch/Nch Synchronous Rectification SW
Capable of Withstanding 1.2 A/15V.
Built-In Phase Compensation Device between Input
and Output of Error AMP.
Built-In Soft-Start Function.
Built-In Short-Circuit Protection with Timer
Application
For Portable Equipments like DSC/DVC Powered by 4
Dry Batteries or Li2cell and Li3cell, or General
Consumer-Equipment with 5V/12V Lines
Key Specifications
Input Voltage Range:
Output Voltage Range:
Output Current:
Switching Frequency:
Pch FET ON-Resistance:
Nch FET ON-Resistance:
Standby Current:
Operating Temperature Range:
+3.5V to +14V
+1.2V to +12V
1.0A(Max)
1.0MHz(Typ)
450mΩ(Typ)
300mΩ(Typ)
0μA(Typ)
-25°C to +85°C
Package
W(Typ) x D(Typ) x H(Max)
HSON8
2.90mm x 3.00mm x 0.60mm
Typical Application Circuit
VVBBAATT==44.5.～5V10toV 10V
1100μµFF
GRM31CBE106KA75L
（Murata）
11μµ F
GRM188B11A105KA61
（Murata）
11μµFF
GRM188B11A105KA61
（Murata）
GND INV
VCC
VREG
STB
PVCC
ON/OFF
10pF
3.3V/500mA
668k8k Ω
220000kk Ω
PGND
LLxX 4..77μµHH
1127AS4R7M（TOKO）
Figure 1. Typical Application Circuit
515k1kΩ
1100μµFF
GRM31CB11A106KA01
（Murata）
222k2k Ω
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/27
TSZ02201-0Q3Q0NZ00370-1-2
17.Feb.2015 Rev.002
1 page  
BD8313HFN
Typical Performance Curves
(Unless otherwise specified, Ta = 25°C, VCC = 7.4V)
1.02
1.01
1.00
0.99
0.98
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Figure 4. INV Threshold vs Temperature
5.3
5.2
5.1
5.0
4.9
4.8
4.7
-40
0 40 80
Temperature [ºC]
120
Figure 6. VREG Output vs Temperature
1.02
1.01
1.00
0.99
0.98
0
5
VCC [V]
10
Figure 5. INV Threshold vs VCC
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
VCC [V]
Figure 7. VREG Output vs VCC
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/27
TSZ02201-0Q3Q0NZ00370-1-2
17.Feb.2015 Rev.002
5 Page 
BD8313HFN
3. Reference Application Data 2 (Example of Application 1)
( Input: 4.5V, 6.0V, 8.4V, 10V ; Output: 3.3V )
Phase
Gain
Phase
Gain
Frequency [Hz]
Figure 25. Gain vs Frequency 1
(VCC=4.5V, IO=250mA)
Phase
Gain
Frequency [Hz]
Figure 26 Gain vs Frequency 2
(VCC=6.0V, IO=250mA)
Phase
Gain
Frequency [Hz]
Figure 27. Gain vs Frequency 3
(VCC=8.4V, IO=250mA)
Frequency [Hz]
Figure 28. Gain vs Frequency 4
(VCC=10V, IO=250mA)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/27
TSZ02201-0Q3Q0NZ00370-1-2
17.Feb.2015 Rev.002
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet BD8313HFN.PDF ] | |
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