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부품번호 | BLF6G22-45 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 10 페이지수
BLF6G22-45
Power LDMOS transistor
Rev. 02 — 21 April 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
2110 to 2170
28 2.5 18.5 13
ACPR
(dBc)
−49[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 405 mA:
N Average output power = 2.5 W
N Power gain = 18.5 dB (typ)
N Efficiency = 13 %
N ACPR = −49 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G22-45
www.DataSheet4U.com
Power LDMOS transistor
22
Gp
(dB)
20
001aah604 60
ηD
ηD (%)
50
18 40
Gp
16 30
14 20
12
0
10
10 20 30 40 50 60
PL (W)
Fig 1.
VDS = 28 V; IDq = 405 mA; f = 2170 MHz.
One-tone CW power gain and drain efficiency as functions of load power; typical
values
20
Gp
(dB)
19
18
17
16
Gp
ηD
001aah605
60
ηD
(%)
50
40
30
20
−10
IMD
(dBc)
−20
−30
−40
−50
001aah606
IMD3
IMD5
IMD7
15 10 −60
14 0
0 10 20 30 40 50 60 70
PL(PEP) (W)
Fig 2.
VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz;
f2 = 2170.1 MHz.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
−70
0 10 20 30 40 50 60 70
PL(PEP) (W)
Fig 3.
VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz;
f2 = 2170.1 MHz.
Intermodulation distortion as a function of
peak envelope load power; typical values
BLF6G22-45_2
Product data sheet
Rev. 02 — 21 April 2008
© NXP B.V. 2008. All rights reserved.
4 of 10
4페이지 NXP Semiconductors
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
BLF6G22-45
www.DataSheet4U.com
Power LDMOS transistor
SOT608A
D
A
3
D1
F
U1
q
1
B
C
c
H U2
A
2
b
0
p
w1 M A M B M
E1
w2 M C M
5
scale
10 mm
Q
E
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
D D1 E E1 F
H
p
Q q U1 U2 w1 w2
mm
4.62
3.76
7.24
6.99
0.15 10.21 10.29 10.21 10.29 1.14 15.75 3.30
0.10 10.01 10.03 10.01 10.03 0.89 14.73 2.92
1.70
1.35
15.24
20.45
20.19
9.91
9.65
0.25
0.51
inches
0.182
0.148
0.285
0.275
0.006
0.004
0.402
0.394
0.405
0.395
0.402
0.394
0.405
0.395
0.045
0.035
0.620
0.580
0.130
0.115
0.067
0.053
0.600
0.805
0.795
0.390
0.380
0.010
0.020
OUTLINE
VERSION
SOT608A
IEC
REFERENCES
JEDEC
EIAJ
Fig 8. Package outline SOT608A
BLF6G22-45_2
Product data sheet
Rev. 02 — 21 April 2008
EUROPEAN
PROJECTION
ISSUE DATE
01-02-22
02-02-11
© NXP B.V. 2008. All rights reserved.
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