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BLF6G27-135 데이터시트 PDF




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부품번호 BLF6G27-135 기능
기능 WiMAX power LDMOS transistor
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BLF6G27-135 데이터시트, 핀배열, 회로
BLF6G27-135; BLF6G27LS-135www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) PL(p) Gp ηD ACPR885k ACPR1980k
(MHz)
(V) (W) (W) (dB) (%) (dBc)
(dBc)
1-carrier N-CDMA[1] 2500 to 2700 32 20
200 16 22.5 52[2]
67[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA:
N Average output power = 20 W
N Power gain = 16 dB
N Drain efficiency = 22.5 %
N ACPR885k = 52.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range




BLF6G27-135 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
www.DataSheet4U.com
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 28 / 25; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
Table 8. Frame structure
Frame contents
Zone 0 FCH 2 symbols × 4 subchannels
Zone 0 data 2 symbols × 26 subchannels
Zone 0 data 44 symbols × 30 subchannels
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Data length
3 bit
692 bit
10000 bit
7.2.2 Graphs
2.5
EVM
(%)
2.0
1.5
1.0
001aah641
20
Gp
(dB)
18
16
14
Gp
ηD
001aah642 25
ηD
(%)
20
15
10
0.5 12 5
0
0 4 8 12 16 20 24 28
PL(AV) (W)
Fig 1.
VDS = 32 V; IDq = 1200 mA; f = 2600 MHz.
EVM as function of average load power;
typical values
10 0
0 4 8 12 16 20 24 28
PL(AV) (W)
Fig 2.
VDS = 32 V; IDq = 1200 mA; f = 2600 MHz.
Power gain and drain efficiency as functions of
average load power; typical values
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Rev. 02 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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BLF6G27-135 전자부품, 판매, 대치품
NXP Semiconductors
8. Test information
BLF6G27-135; BLF6G27LS-135
www.DataSheet4U.com
WiMAX power LDMOS transistor
VGG
R1
C2
C3
C1
C4 C5 C6 C7
R2
L1 VDD C9
+
C8
C10
BLF6G27-135
input-rev 1A
30RF35
NXP
BLF6G27-135
output-rev 1A
30RF35
NXP
001aah650
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit
Table 9. List of components
For test circuit, see Figure 10.
Component
Description
C1, C3, C4, C10 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C5 multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
C6, C7
multilayer ceramic chip capacitor
C8 electrolytic capacitor
L1 ferrite SMD bead
R1 SMD resistor
R2 SMD resistor
Value
8.2 pF
4.7 µF; 50 V
10 µF; 50 V
1.5 µF; 50 V
100 nF
470 µF; 63 V
-
5.1
9.1
Remarks
ATC 100B or equivalent
TDK C4532X7R1H475M or equivalent
TDK C5750X7R1H106M or equivalent
TDK C3225X7R1H155M or equivalent
Vishay VJ1206Y104KXB or equivalent
ATC 100B or equivalent
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
SMD 1206
SMD 1206
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Rev. 02 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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BLF6G27-135

WiMAX power LDMOS transistor

NXP Semiconductors
NXP Semiconductors

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