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PDF BLF6G27-75 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G27-75 | |
| Descripción | WiMAX power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G27-75; BLF6G27LS-75www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) PL(M) Gp ηD
(MHz)
(V) (W) (W) (dB) (%)
1-carrier N-CDMA[1] 2500 to 2700 28 9
75 17 23
ACPR885k
(dBc)
−50[2]
ACPR1980k
(dBc)
−60[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an IDq of 600 mA:
N Average output power = 9 W
N Power gain = 17 dB
N Drain efficiency = 23 %
N ACPR885 = −50.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use
1 page  
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
www.DataSheet4U.com
WiMAX power LDMOS transistor
7.3 Single carrier IS-95
19
Gp
(dB)
18
17
16
(1)
(3)
(2)
001aak976
50
ηD
(%)
40
30
20
001aak977
(2)
(1)
(3)
15 10
14
0
10 20 30 40 50
PL (W)
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3. Power gain as a function of load power;
typical values
−20
ACPR885k
(dBc)
−30
001aak978
−40
(2)
(1)
−50 (3)
−60
0
0 10 20 30 40 50
PL (W)
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
−40
ACPR1980k
(dBc)
−50
001aak979
(1)
(2)
−60 (3)
−70
−70
0
10 20 30 40 50
PL (W)
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5. Adjacent channel power ratio (885 kHz) as a
function of load power; typical values
−80
0
10 20 30 40 50
PL (W)
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 6. Adjacent channel power ratio (1980 kHz) as a
function of load power; typical values
BLF6G27-75_6G27LS-75_1
Product data sheet
Rev. 01 — 22 October 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
www.DataSheet4U.com
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D1 D
L
H U2
U1
1
c
E1 E
2
b
w2 M D M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
D D1 E E1 F
H
L
Q U1 U2 w2
mm
4.72 12.83 0.15 20.02 19.96 9.50
3.43 12.57 0.08 19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
1.70 20.70
1.45 20.45
9.91
9.65
0.25
inches
0.186
0.135
0.505
0.495
0.006
0.003
0.788
0.772
0.786
0.774
0.374
0.366
0.375
0.364
0.045
0.035
0.785
0.745
0.210
0.170
0.067
0.057
0.815
0.805
0.390
0.380
0.010
OUTLINE
VERSION
SOT502B
IEC
Fig 18. Package outline SOT502B
BLF6G27-75_6G27LS-75_1
Product data sheet
REFERENCES
JEDEC
JEITA
Rev. 01 — 22 October 2009
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
© NXP B.V. 2009. All rights reserved.
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