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PDF BLF6G38-10G Data sheet ( Hoja de datos )
| Número de pieza | BLF6G38-10G | |
| Descripción | WiMAX power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G38-10; BLF6G38-10Gwww.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 01 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp ηD ACPR885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA[1] 3400 to 3600 28 2
14 20 −49[2]
ACPR1980k
(dBc)
−64[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
I Qualified up to a maximum VDS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page  
NXP Semiconductors
BLF6G38-10; BLF6G38-10G
www.DataSheet4U.com
WiMAX power LDMOS transistor
7.2.2 Graphs
12
EVM
(%)
8
001aaj362
4
0
10−1
1 10
PL (W)
Fig 1.
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
EVM as a function of load power;
typical values
20
Gp
(dB)
18
16
Gp
001aaj363
50
ηD
(%)
40
30
14 20
12 ηD
10
10
10−1
0
1 10
PL(AV) (W)
Fig 2.
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
Power gain and drain efficiency as function of
average load power; typical values
−20
ACPR
(dBc)
−30
001aaj364
ACPR10M
−40
ACPR20M
−50
ACPR30M
−60
10−1
1 10
PL(AV) (W)
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
Fig 3. Adjacent channel power ratio as a function of average load power; typical values
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Rev. 01 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
9. Package outline
Earless flanged ceramic package; 2 leads
BLF6G38-10; BLF6G38-10G
www.DataSheet4U.com
WiMAX power LDMOS transistor
SOT975B
D
AF
U1
D1 A
1
c
H
E1 U2
E
2
b
w1 M A M
Q
05
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
10 mm
UNIT A b c D D1 E E1 F H Q U1 U2 w1
mm
3.63 3.38
3.05 3.23
0.23
0.18
6.55
6.40
6.93
6.78
6.55
6.40
6.93
6.78
0.23 11.05 0.76
0.18 10.80 0.66
6.43
6.27
6.43
6.27
0.51
inches
0.143
0.120
0.133
0.127
0.009
0.007
0.258
0.252
0.273
0.267
0.258
0.252
0.273
0.267
0.009
0.007
0.435
0.425
0.030
0.026
0.253
0.247
0.253
0.247
0.02
OUTLINE
VERSION
SOT975B
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
06-11-03
07-09-28
Fig 12. Package outline SOT975B
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Rev. 01 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
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