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부품번호 | BLL1214-250R 기능 |
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기능 | LDMOS L-band radar power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead
flange package (SOT502A) with a ceramic cap. The common source is connected to the
flange.
Table 1. Test information
Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test
circuit.
Mode of operation f
VDS IDq
PL Gp ηD Pdroop(pulse) tr
tf
(GHz)
(V) (mA) (W) (dB) (%) (dB)
(ns) (ns)
pulsed RF
1.2 to 1.4 36 150 250 13 47 0.2
15 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %:
Output power = 250 W
Power gain = 13 dB
Efficiency = 47 %
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL1214-250R
www.DataSheet4U.com
LDMOS L-band radar power transistor
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
7.2 Application circuit
Table 9. List of components
See Figure 2.
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB); εr = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
ground plane.
Component Description
Value
Remarks
C1, C3
multilayer ceramic chip capacitor 39 pF
[1]
C2, C4
multilayer ceramic chip capacitor 47 pF
[1]
C5, C6
multilayer ceramic chip capacitor 20 nF
[2]
C7
multilayer ceramic chip capacitor 36 pF
[2]
C8 electrolytic capacitor
100 μF; 100 V
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 200B or capacitor of same quality.
BLL1214-250R_1
Product data sheet
Rev. 01 — 4 February 2010
© NXP B.V. 2010. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
BLL1214-250R
www.DataSheet4U.com
LDMOS L-band radar power transistor
mld862
mld863
60 60
(1)
ηD ηD
(%) (2) (%)
(1)
(3)
(2)
40 40
(3)
20 20
0
0 100 200 300
PL (W)
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 7. Drain efficiency as a function of load power;
typical values
15
Gp
(dB)
14
13
mld864
60
ηD
(%)
ηD 50
Gp
40
0
0 100 200 300
PL (W)
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 8. Drain efficiency as a function of load power;
typical values
15
Gp
(dB)
14
13
mld865
60
ηD
(%)
Gp
50
ηD
40
12 30 12 30
11 20 11 20
10 10
1.15
1.25
1.35
1.45
f (GHz)
10 10
1.15 1.25 1.35 1.45
f (GHz)
Fig 9.
tp = 1 ms; δ = 10 %.
Power gain and drain efficiency as function of
frequency; typical values
tp = 100 μs; δ = 10 %.
Fig 10. Power gain and drain efficiency as function of
frequency; typical values
BLL1214-250R_1
Product data sheet
Rev. 01 — 4 February 2010
© NXP B.V. 2010. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BLL1214-250 | L-band radar LDMOS transistor | NXP Semiconductors |
BLL1214-250R | LDMOS L-band radar power transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |