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BLL6H1214-500 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL6H1214-500
기능 LDMOS L-band radar power transistor
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BLL6H1214-500 데이터시트, 핀배열, 회로
BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
1.2 to 1.4 50 500
17 50
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %:
‹ Output power = 500 W
‹ Power gain = 17 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1.2 GHz to 1.4 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)




BLL6H1214-500 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL6H1214-500
www.DataSheet4U.com
LDMOS L-band radar power transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f
GHz
ZS
Ω
1.2 1.268 j2.623
1.3 2.193 j2.457
1.4 2.359 j2.052
ZL
Ω
2.987 j1.664
2.162 j1.326
1.604 j1.887
gate
ZS
drain
ZL
001aaf059
Fig 1. Definition of transistor impedance
BLL6H1214-500_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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BLL6H1214-500 전자부품, 판매, 대치품
NXP Semiconductors
BLL6H1214-500
www.DataSheet4U.com
LDMOS L-band radar power transistor
7.2.2 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 65 °C
700
PL
(W)
600
500
001aak756
(1)
(2)
(3)
400
300
200
100
0
0 6 12 18
Pi (W)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 7. Output power as a function of input power;
typical values
60
ηD
(%)
40
001aak758
(1)
(2)
(3)
20
18
Gp
(dB)
12
001aak757
(1)
(2)
(3)
6
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 8. Power gain as a function of load power;
typical values
20
Gp
(dB)
18
16
001aak759
55
ηD ηD
(%)
45
Gp
35
14 25
12 15
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 9. Drain efficiency as a function of load power;
typical values
10 5
1.15
1.25
1.35
1.45
f (GHz)
PL = 250 W; VDS = 50 V; tp = 300 μs; δ = 10 %;
IDq = 100 mA.
Fig 10. Power gain and drain efficiency as function of
frequency; typical values
BLL6H1214-500_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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BLL6H1214-500

LDMOS L-band radar power transistor

NXP Semiconductors
NXP Semiconductors

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