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PDF BLM6G10-30G Data sheet ( Hoja de datos )

Número de pieza BLM6G10-30G
Descripción W-CDMA 900 MHz - 1000 MHz power MMIC
Fabricantes NXP Semiconductors　
Logotipo NXP Semiconductors Logotipo



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BLM6G10-30; BLM6G10-30Gwww.DataSheet4U.com
W-CDMA 900 MHz - 1000 MHz power MMIC
Rev. 01 — 28 August 2009
Objective data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
920 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead
(SOT834-1)
Table 1. Typical performance
Typical RF performance at Th = 25 °C.
Mode of operation f
VDS PL(AV)
(MHz)
(V) (W)
2-carrier W-CDMA f1 = 935; f2 = 945 28 2
Gp
(dB)
29
ηD
(%)
11.5
IMD3
(dBc)
−48.5[1]
ACPR
(dBc)
−52[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a frequency of 940 MHz:
N Average output power = 2 W
N Gain = 29 dB (typ)
N Efficiency = 11.5 %
N IMD3 = −48.5 dBc
N ACPR = −52 dBc
I Integrated temperature compensated bias
I Excellent thermal stability
I Biasing of individual stages is externally accessible
I Integrated ESD protection
I Small component size, very suitable for PA size reduction
I On-chip matching (input matched to 50 ohm, output partially matched)
I High power gain
I Designed for broadband operation (920 MHz to 960 MHz)

1 page




BLM6G10-30G pdf
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
www.DataSheet4U.com
W-CDMA 900 MHz - 1000 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G22-30G application circuit.
35
Gp
(dB)
33
31
29
27
001aak501
15
−46
ηD IMD3,
(%) ACPR
13 (dBc)
−48
ηD
11
Gp −50
9
−52
7
IMD3
001aak502
ACPR
25 5
880 920 960 1000
f (MHz)
Fig 2.
Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 105 mA;
IDq2 = 288 mA; carrier spacing = 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of frequency;
typical values
−54
880 920 960 1000
f (MHz)
Fig 3.
Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 105 mA;
IDq2 = 288 mA; carrier spacing = 10 MHz.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function of frequency; typical values
36
Gp
(dB)
34
32
30
28
26
(1)
(2)
(3)
Gp
Gp
Gp
24
22
10−1
ηD
1
001aak503
56
ηD
(%)
48
(1) 40
(2)
(3)
32
24
16
8
0
10 102
PL(AV) (W)
−20
Gp
(dB)
−30
001aak504
−40
(3) (2) (1) IMD3
−50
−60
10−1
(3) (2) (1) ACPR
1
10 102
PL(AV) (W)
VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as function of average output power
and temperature; typical values
VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) Tcase = −30 °C
(2) Tcase = 25 °C
(3) Tcase = 85 °C
Fig 5.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function of average output power and
temperature; typical values
BLM6G10-30_BLM6G10-30G_1
Objective data sheet
Rev. 01 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 11

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BLM6G10-30G arduino
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
www.DataSheet4U.com
W-CDMA 900 MHz - 1000 MHz power MMIC
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
8.3 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Handling information. . . . . . . . . . . . . . . . . . . . . 9
10.1 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 9
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 August 2009
Document identifier: BLM6G10-30_BLM6G10-30G_1

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