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BLM6G22-30G 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BLM6G22-30G은 전자 산업 및 응용 분야에서
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PDF 형식의 BLM6G22-30G 자료 제공

부품번호 BLM6G22-30G 기능
기능 W-CDMA 2100 MHz to 2200 MHz power MMIC
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


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BLM6G22-30G 데이터시트, 핀배열, 회로
BLM6G22-30; BLM6G22-30Gwww.DataSheet4U.com
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 03 — 21 November 2008
Preliminary data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1. Typical performance
Typical RF performance at Th = 25 °C.
Mode of operation f
(MHz)
2-carrier W-CDMA 2110 to 2170
VDS
(V)
28
PL(AV)
(W)
2
Gp ηD IMD3
(dB) (%) (dBc)
29.5 9
48[1]
ACPR
(dBc)
50[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
N Average output power = 2 W
N Power gain = 30 dB (typ)
N Efficiency = 9 %
N IMD3 = 48 dBc
N ACPR = 50 dBc
I Integrated temperature compensated bias
I Excellent thermal stability
I Biasing of individual stages is externally accessible
I Integrated ESD protection
I Small component size, very suitable for PA size reduction
I On-chip matching (input matched to 50 Ohm, output partially matched)
I High power gain
I Designed for broadband operation (2100 MHz to 2200 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)




BLM6G22-30G pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLM6G22-30; BLM6G22-30G
www.DataSheet4U.com
W-CDMA 2100 MHz to 2200 MHz power MMIC
7. Characteristics
Table 6. Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz;
f4 = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; Th = 25 °C unless otherwise specified;
in a production test circuit as described in Section 9 “Test information”.
Symbol Parameter
Conditions Min Typ Max Unit
Gp power gain
PL(AV) = 2 W 27.5 30 32.5 dB
RLin
ηD
IMD3
ACPR
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
PL(AV) = 2 W
PL(AV) = 2 W
PL(AV) = 2 W
PL(AV) = 2 W
10 14 -
dB
7.5 9 -
%
- 48 44.5 dBc
- 50 47 dBc
8. Application information
8.1 Ruggedness
The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA.
8.2 Impedance information
Table 7.
f
MHz
2075
2085
2095
2105
2115
2125
2135
2145
2155
2165
2175
2185
2195
2205
Typical impedance
Zi[1]
40.9 + j22.8
41.2 + j23.2
41.6 + j23.3
41.9 + j23.3
42.1 + j23.3
42.2 + j23.2
42.4 + j23.1
42.3 + j22.9
42.5 + j22.8
42.6 + j22.8
42.7 + j22.8
43.0 + j23.0
43.6 + j23.1
44.2 + j23.3
[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
ZL[2]
18.0 j5.5
17.8 j5.6
17.7 j5.7
17.7 j5.9
17.6 j6.0
17.4 j6.0
17.3 j6.1
17.2 j6.1
17.0 j6.2
16.8 j6.3
16.6 j6.4
16.4 j6.6
16.3 j6.9
16.1 j7.2
BLM6G22-30_BLM6G22-30G_3
Preliminary data sheet
Rev. 03 — 21 November 2008
© NXP B.V. 2008. All rights reserved.
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BLM6G22-30G 전자부품, 판매, 대치품
NXP Semiconductors
9. Test information
C3
BLM6G22-30; BLM6G22-30G
www.DataSheet4U.com
W-CDMA 2100 MHz to 2200 MHz power MMIC
C11
C9
C15
C4
C1
C5
C13 C14
C6
R1 R2
C7
C2 C8
C10
C12
001aah629
Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with εr = 3.5; thickness = 0.76 mm.
See Table 8 for a list of components.
Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA
Table 8. List of components
For test circuit see Figure 10.
Component
Description
Value
C1, C13
multilayer ceramic chip capacitor 0.3 pF
C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 µF; 50 V
C3, C15
electrolytic capacitor
220 µF; 35 V
C5, C9, C10, C14
multilayer ceramic chip capacitor 10 pF
C6, C7
multilayer ceramic chip capacitor 100 nF
R1
SMD resistor 0805
1 k
R2
SMD resistor 0805
3.9 k
[1] American Technical Ceramics (ATC) type 100A or capacitor of same quality.
Remarks
[1]
[1]
BLM6G22-30_BLM6G22-30G_3
Preliminary data sheet
Rev. 03 — 21 November 2008
© NXP B.V. 2008. All rights reserved.
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관련 데이터시트

부품번호상세설명 및 기능제조사
BLM6G22-30

W-CDMA 2100 MHz to 2200 MHz power MMIC

NXP Semiconductors
NXP Semiconductors
BLM6G22-30G

W-CDMA 2100 MHz to 2200 MHz power MMIC

NXP Semiconductors
NXP Semiconductors

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