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PDF BLS6G2731-6G Data sheet ( Hoja de datos )
| Número de pieza | BLS6G2731-6G | |
| Descripción | LDMOS S-Band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 01 — 19 February 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 6
15 33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %:
N Output power = 6 W
N Power gain = 15 dB
N Efficiency = 33 %
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.7 GHz to 3.1 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
I S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
1 page  
NXP Semiconductors
18
Gp
(dB)
16
7.2 Graphs
001aaj447
(2) (1)
BLS6G2731-6G
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LDMOS S-Band radar power transistor
18
Gp
(dB)
16
001aaj448
(2) (1)
14
(3)
14
(3)
12
0
6 12 18
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 2. Power gain as a function of load power; typical
values
12
0
6 12 18
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 3. Power gain as a function of load power; typical
values
70
ηD
(%)
60
50
40
001aaj449
(1)
(2)
(3)
70
ηD
(%)
60
50
40
001aaj450
(1)
(2)
(3)
30 30
20 20
10 10
0
0 6 12 18
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 4. Drain efficiency as a function of load power;
typical values
0
0 6 12 18
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 5. Drain efficiency as a function of load power;
typical values
BLS6G2731-6G_1
Product data sheet
Rev. 01 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLS6G2731-6G
www.DataSheet4U.com
LDMOS S-Band radar power transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 February 2009
Document identifier: BLS6G2731-6G_1
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