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부품번호 | BLS6G3135-20 기능 |
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기능 | LDMOS S-Band radar power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB
production test circuit.
Mode of operation f
VDS
PL
Gp
ηD
tr
tf
(GHz) (V)
(W)
(dB)
(%)
(ns) (ns)
Pulsed RF
3.1 to 3.5 32 20 15.5 45 20 10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %:
N Output power = 20 W
N Power gain = 15.5 dB
N Efficiency = 45 %
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLS6G3135-20; BLS6G3135S-20
www.DataSheet4U.com
LDMOS S-Band radar power transistor
7.1 Impedance information
Table 8. Typical impedance
f ZS
GHz Ω
ZL (optimized for ηD)
Ω
3.1 31.24 − j31.07 6.99 + j12.9
3.2 50.56 − j12.48 5.82 + j8.77
3.3 43.66 + j17.27 2.32 + j6.17
3.4 24.13 + j28.47 5.52 + j6.10
3.5 10.56 + j22.21 5.79 + j3.19
[1] Measured with ZL optimized for Gp.
ZL (optimized for Gp)
Ω
13.01 + j14.75
11.47 + j11.17
10.05 + j10.55
9.93 + j8.48
9.37 + j5.73
Gp(opt)
dB
18.08
17.97
17.75
17.91
17.68
ηD [1]
%
48.34
45.60
47.01
47.03
46.54
gate
ZS
drain
ZL
001aaf059
Fig 1. Definition of transistor impedance
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 µs; δ = 10 %.
BLS6G3135-20_6G3135S-20_3
Product data sheet
Rev. 03 — 3 March 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
8. Test information
BLS6G3135-20; BLS6G3135S-20
www.DataSheet4U.com
LDMOS S-Band radar power transistor
C5
C3 C4
C13
VGG
C6
R1
λ / 4-line
C1
C9
C8
C7
C10 C11
VDD
L1
λ / 4-line
C12
C2
001aah590
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
Table 9. List of components
See Figure 10.
Component
C1, C2, C5, C6, C7, C8, C9
C3, C4, C10, C11
C12
C13
L1
R1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
electrolytic capacitor
copper wire
resistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
Value
33 pF
470 pF
47 µF; 63 V
10 µF; 35 V
-
49.9 Ω
Remarks
[1]
[2]
BLS6G3135-20_6G3135S-20_3
Product data sheet
Rev. 03 — 3 March 2009
© NXP B.V. 2009. All rights reserved.
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