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PDF BUK7C10-75AITE Data sheet ( Hoja de datos )
| Número de pieza | BUK7C10-75AITE | |
| Descripción | N-channel TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
Rev. 03 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
1.3 Applications
Automotive and general purpose
power switching
Fan control
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference
Parameter
drain-source voltage
drain current
Static characteristics
RDSon
drain-source on-state
resistance
ID/Isense
ratio of drain current to
sense current
SF(TSD)
temperature sense diode
temperature coefficient
VF(TSD)
temperature sense diode
forward voltage
Conditions
Min
Tj ≥ 25 °C; Tj ≤ 175 °C
-
VGS = 10 V; Tmb = 25 °C; see Figure 2; [1] -
see Figure 3
VGS = 10 V; ID = 50 A; Tj = 25 °C; see
Figure 7; see Figure 8
Tj > -55 °C; Tj < 175 °C; VGS > 10 V
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
IF = 250 µA; Tj = 25 °C
-
450
-1.4
648
[1] Current is limited by power dissipation chip rating.
Typ Max Unit
- 75 V
- 114 A
8.8 10
mΩ
500 550
-1.54 -1.68 mV/K
658 668 mV
1 page  
NXP Semiconductors
5. Thermal characteristics
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from mounted on printed-circuit board;
junction to ambient
minimum footprint
thermal resistance from see Figure 4
junction to mounting base
Min Typ Max Unit
- - 50 K/W
- - 0.55 K/W
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
600
ID/Isense
550
03ni98
500
450
400
4
8 12 16 20
VGS (V)
Fig 17. Drain-sense current ratio as a function of
gate-source voltage; typical values
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
100
03ni79
IS
(A)
75
50
25
0
0.0
175 ° C
Tj = 25 ° C
0.4 0.8 1.2 VSD (V) 1.6
Fig 18. Reverse diode current as a function of reverse
diode voltage; typical values
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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