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BUK7C10-75AITE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7C10-75AITE
기능 N-channel TrenchPLUS standard level FET
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BUK7C10-75AITE 데이터시트, 핀배열, 회로
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
Rev. 03 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated current sensor
1.3 Applications
„ Automotive and general purpose
power switching
„ Fan control
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference
Parameter
drain-source voltage
drain current
Static characteristics
RDSon
drain-source on-state
resistance
ID/Isense
ratio of drain current to
sense current
SF(TSD)
temperature sense diode
temperature coefficient
VF(TSD)
temperature sense diode
forward voltage
Conditions
Min
Tj 25 °C; Tj 175 °C
-
VGS = 10 V; Tmb = 25 °C; see Figure 2; [1] -
see Figure 3
VGS = 10 V; ID = 50 A; Tj = 25 °C; see
Figure 7; see Figure 8
Tj > -55 °C; Tj < 175 °C; VGS > 10 V
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
IF = 250 µA; Tj = 25 °C
-
450
-1.4
648
[1] Current is limited by power dissipation chip rating.
Typ Max Unit
- 75 V
- 114 A
8.8 10
m
500 550
-1.54 -1.68 mV/K
658 668 mV




BUK7C10-75AITE pdf, 반도체, 판매, 대치품
NXP Semiconductors
120
Pder
(%)
80
40
03na19
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
120
ID
(A)
80
Capped at 75 A due to package
40
03ni93
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
1
1 10
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
03ni94
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102 VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7C10-75AITE 전자부품, 판매, 대치품
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
www.DataSheet4U.com
Table 6. Characteristics …continued
Symbol Parameter
Conditions
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 ; VGS = 10 V;
RG(ext) = 10 ; Tj = 25 °C
from upper edge of drain mounting base to
center of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 35 - ns
- 108 - ns
- 185 - ns
- 100 - ns
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 75 - ns
- 270 - nC
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7C10-75AITE

N-channel TrenchPLUS standard level FET

NXP Semiconductors
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