BUK7E07-55B Datasheet PDF - NXP Semiconductors
| Part Number | BUK7E07-55B | |
| Description | N-channel TrenchMOS standard level FET | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and BUK7E07-55B download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 29 January 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC standard for use in Automotive critical
applications.
1.2 Features
I Very low on-state resistance
I 175 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 351 mJ
I ID ≤ 75 A
I RDSon = 5.8 mΩ (typ)
I Ptot ≤ 203 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to drain (D)
Simplified outline
mb
Symbol
D
G
mbb076 S
123
SOT226 (I2PAK)
|
| |
 
NXP Semiconductors
BUK7E07-55B
www.DataSheet4U.com
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
IDSS drain leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IGSS gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
ID = 25 A; VDS = 44 V; VGS = 10 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
measured from drain lead 6 mm from
package to centre of die
LS
internal source inductance
measured from source lead
to source bond pad
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
IS = 25 A; VGS = 0 V; see Figure 15
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min Typ Max Unit
55 - - V
50 - - V
234V
1- - V
- - 4.4 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 5.8 7.1 mΩ
- - 14.2 mΩ
- 53 - nC
- 12 - nC
- 17 - nC
- 2820 3760 pF
- 554 665 pF
- 200 274 pF
- 24 - ns
- 52 - ns
- 77 - ns
- 41 - ns
- 4.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 62 - ns
- 60 - nC
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK7E07-55B electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK7E07-55B.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| BUK7E07-55B | The function is N-channel TrenchMOS standard level FET. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
BUK7
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||