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BUK7E07-55B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E07-55B
기능 N-channel TrenchMOS standard level FET
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BUK7E07-55B 데이터시트, 핀배열, 회로
BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 29 January 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC standard for use in Automotive critical
applications.
1.2 Features
I Very low on-state resistance
I 175 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S 351 mJ
I ID 75 A
I RDSon = 5.8 m(typ)
I Ptot 203 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to drain (D)
Simplified outline
mb
Symbol
D
G
mbb076 S
123
SOT226 (I2PAK)




BUK7E07-55B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7E07-55B
www.DataSheet4U.com
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting base -
thermal resistance from junction to ambient
vertical in still air
Min Typ Max Unit
- - 0.74 K/W
- 60 - K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
101
0.1
0.05
0.02
102
single pulse
003aac122
P
tp
δ=
T
103
106
105
104
103
102
tp
T
101
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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BUK7E07-55B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7E07-55B
www.DataSheet4U.com
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
003aab852
max
typ
min
101
ID
(A)
102
103
104
105
003aab853
min typ max
0
60
0
60 120 160
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
106
0246
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
60
gfs
(S)
40
003aac126
4
C
(nF)
3
003aac127
Ciss
2
Coss
20
1
Crss
0
0 25 50 75 100
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values
0
102
101
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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BUK7E07-55B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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