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BUK7E11-55B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E11-55B
기능 TRENCHMOS-TM STANDARD LEVEL FET
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BUK7E11-55B 데이터시트, 핀배열, 회로
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
Rev. 02 — 11 November 2003
www.DataSheet4U.com
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S 173 mJ
s ID 75 A
s RDSon = 9.9 m(typ)
s Ptot 157 W.
2. Pinning information
Table 1: Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
3 source (s)
[1]
mb
mb
mb mounting base,
connected to
drain (d)
mb
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.




BUK7E11-55B pdf, 반도체, 판매, 대치품
Philips Semiconductors
5. Thermal characteristics
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
www.DataSheet4U.com
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting Figure 4
base
Rth(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in still air
SOT404 (D2-PAK)
minimum footprint; mounted on a
printed-circuit board
SOT226 (I2-PAK)
vertical in still air
5.1 Transient thermal impedance
Min Typ Max Unit
- - 0.95 K/W
- 60 - K/W
- 50 - K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nn45
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7E11-55B 전자부품, 판매, 대치품
Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
www.DataSheet4U.com
300
ID
(A)
Label is VGS (V)
20
03nn41
14
30
RDSon
(m)
03nn40
200 10
9
8.5
8
100 7.5
7
6.5
6
5.5
5
0 4.5
0 2 4 6 8 10
VDS (V)
20
10
0
5 10 15 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
30
RDSon
(m)
20
10
03nn42
6
6.5 7
Label is VGS (V)
7.5
8
10
2
a
1.5
1
0.5
03ne89
0
0
Tj = 25 °C
60
120 ID (A) 180
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7E11-55B

TRENCHMOS-TM STANDARD LEVEL FET

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