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PDF BUK7611-55B Data sheet ( Hoja de datos )
| Número de pieza | BUK7611-55B | |
| Descripción | TRENCHMOS-TM STANDARD LEVEL FET | |
| Fabricantes | NXP Semiconductors | |
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BUK75/76/7E11-55B
TrenchMOS™ standard level FET
Rev. 02 — 11 November 2003
www.DataSheet4U.com
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 173 mJ
s ID ≤ 75 A
s RDSon = 9.9 mΩ (typ)
s Ptot ≤ 157 W.
2. Pinning information
Table 1: Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
3 source (s)
[1]
mb
mb
mb mounting base,
connected to
drain (d)
mb
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1 page  
Philips Semiconductors
6. Characteristics
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
www.DataSheet4U.com
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDD = 44 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of
die SOT78
from upper edge of drain
mounting base to center of
die SOT404/SOT226
Ls internal source inductance from source lead 6 mm from
package to source bond pad
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--V
--V
34
--
- 4.4
0.02 1
- 500
2 100
V
V
V
µA
µA
nA
9.9
-
37
9
12
1 953
375
167
11
45
41
27
4.5
3.5
11
22
-
-
-
2 604
450
230
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
2.5 -
nH
7.5 -
nH
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
www.DataSheet4U.com
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
D1
D
HD
E
2
13
ee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D
max.
D1
mm 4.50 1.40 0.85 0.64 11 1.60
4.10 1.27 0.60 0.46
1.20
E
10.30
9.70
e
2.54
Lp HD Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT404
IEC
Fig 17. SOT404 (D2-PAK).
9397 750 12053
Product data
REFERENCES
JEDEC
EIAJ
Rev. 02 — 11 November 2003
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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