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PDF BUK7E2R3-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK7E2R3-40C | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
www.DataSheet4U.
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 40 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 100 A
see Figure 1; see Figure 3; [2]
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 333 W
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
- 1.96 2.3 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID = 100 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
1 page  
NXP Semiconductors
103
IAL
(A)
102
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
www.DataSheet4U.com
003aab013
(1)
10
1
10-3
10-2
10-1
(2)
(3)
1 10
tAL (ms)
Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7E2R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
7. Package outline
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
www.DataSheet4U.com
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 b
b1
c
D
max
D1
E
e
L L1 Q
mm
4.5 1.40 0.85 1.3
4.1 1.27 0.60 1.0
0.7
0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
JEITA
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
Fig 17. Package outline SOT226 (I2PAK)
ISSUE DATE
05-06-23
06-02-14
BUK7E2R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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