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BUK7E2R3-40C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E2R3-40C
기능 N-channel TrenchMOS standard level FET
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BUK7E2R3-40C 데이터시트, 핀배열, 회로
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
www.DataSheet4U.
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
„ 12V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 40 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 100 A
see Figure 1; see Figure 3; [2]
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 333 W
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
- 1.96 2.3 m
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID = 100 A; Vsup 40 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.




BUK7E2R3-40C pdf, 반도체, 판매, 대치품
NXP Semiconductors
300
ID
(A)
200
003aab004
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
www.DataSheet4U.com
120
Pder
(%)
80
03aa16
100
(1)
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
limit RDSon = VDS/ID
102 (1)
10
1
101
101
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab028
DC
10
δ = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E2R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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BUK7E2R3-40C 전자부품, 판매, 대치품
NXP Semiconductors
6. Characteristics
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
www.DataSheet4U.com
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
IDSS drain leakage current
Dynamic characteristics
QG(tot)
QGS
QGD
VGS(pl)
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
BUK7E2R3-40C_3
Product data sheet
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C; see
Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 12; see Figure 13
VDS = 40 V; VGS = 0 V; Tj = 175 °C
ID = 25 A; VDS = 32 V; VGS = 10 V; see
Figure 15
ID = 25 A; VDS = 32 V; see Figure 15
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 30 V; RL = 1.2 ; VGS = 10 V;
RG(ext) = 10
from drain lead 6 mm from package to
centre of die
from upper edge of drain mounting base to
centre of die
from source lead to source bonding pad
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 14
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
Rev. 03 — 26 January 2009
Min Typ Max Unit
36 - - V
40 - - V
234V
1- - V
- - 4.4 V
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
- - 4.26 m
-
1.96 2.3
m
- - 500 µA
- 175 - nC
- 49 - nC
- 67 - nC
- 5- V
- 8492 11323 pF
- 1606 1927 pF
- 1101 1508 pF
- 65 - ns
- 133 - ns
- 146 - ns
- 119 - ns
- 4.5 - nH
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 75 - ns
- 57 - nC
© NXP B.V. 2009. All rights reserved.
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