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PDF SiW4000 Data sheet ( Hoja de datos )
| Número de pieza | SiW4000 | |
| Descripción | Bluetooth System-on-Chip (SoC) | |
| Fabricantes | RF Micro Devices | |
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Hay una vista previa y un enlace de descarga de SiW4000 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SiW4000 -– Bluetooth® Technology Solution
RF Micro Devices®
Bluetooth® System-on-Chip (SoC)
With Enhanced Data Rate
www.DataSheet4U.com
The highly integrated SiW4000 Bluetooth® system-on-chip (SoC)
solution combines a 2.4GHz transceiver, a GFSK/DQPSK/8DPSK
modem with a complete baseband, CPU and protocol stack
software up to the HCI interface in ROM. Enhanced Data Rate
support delivers up to three times faster data throughput than
Bluetooth V1.2 devices.
Ideally suited for mobile phones, the SiW4000 is fabricated
using a 0.13 micron CMOS process, lowering power
consumption, reducing size and lowering the total bill-of
materials (BOM) cost.
Low Current Consumption
The SiW4000 solution takes advantage of the inherent power
efficiencies of 0.13 micron CMOS process technology. Other
power management features include a shutdown mode
reducing current consumption even when connected directly
to a battery. The SiW4000 consumes up to three times less
power than previous generations of RFMD Bluetooth chips.
Increased Data Throughput
The SiW4000 features Enhanced Data Rate, providing data
transfer rates of 2 and 3Mbps, which are double and triple
the data speeds of current Bluetooth V1.2 solutions. This
higher data throughput enables more efficient bandwidth
utilization, which not only lowers power but also broadens
the applications for Bluetooth technology.
The SiW4000 is fully backward compatible with Bluetooth V1.1
and V1.2 devices.
Excellent RF Performance
The direct conversion architecture of the SiW4000 enhances RF
performance by reducing spurious emissions and providing
superior RF blocking characteristics. The powerful, full-featured
ARM7TDMI® processor-based baseband delivers all the
mandatory and optional features in Bluetooth V1.2, including
adaptive frequency hopping for coexistence with 802.11 and
extended SCO (eSCO) for better audio performance.
Reduced Size
Based on 0.13 micron CMOS process
technology, the SiW4000 features a footprint
up to 40 percent smaller than competitive products on the
market. The reduced die size of the SiW4000 and the need for
very few external passives make the footprint ideally suited for
direct printed circuit board (PCB) assembly.
Lower Bill of Materials (BOM)
The SiW4000 was designed to lower a customer’s total system
bill-of-materials costs. Requiring only six capacitors, one
inductor and a band pass filter externally in a typical mobile
phone application, the SiW4000 reduces the number of
components a customer needs to buy and insert on their PCB.
Additionally, the SiW4000’s internal 50 Ohm RF matching
circuits and higher performance margins mean that no tuning
is required in development or production. Customers not only
save on total component costs, but also save during the design
and manufacturing process.
Features:
0.13 micron CMOS process technology
2 and 3 Mbps data transfer rates
Designed for mobile phones
All mandatory and optional Bluetooth V1.2 features
Low BOM (6 capacitors, 1 inductor, 1 band pass filter)
On-chip 50 Ohm matching network for reduced
component count
Fractional-N synthesizer with fast settling
Adaptive Frequency Hopping (AFH) for coexistence
with 802.11
Extended SCO for better audio performance
ARM7TDMI® processor core
Stacked FLASH version available for OEM development work
Fully backward compatible with Bluetooth® V1.1 and V1.2
devices
4.5mm x 4.5mm die size; easy-to-use BGA package
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SiW4000.PDF ] | |
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