|
|
PDF PHX27NQ11T Data sheet ( Hoja de datos )
| Número de pieza | PHX27NQ11T | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHX27NQ11T (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
PHX27NQ11T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 14 May 2004
www.DataSheet4U.com
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated
plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Isolated package.
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies.
1.4 Quick reference data
s VDS ≤ 110 V
s Ptot ≤ 50 W
s ID ≤ 20.8 A
s RDSon ≤ 50 mΩ.
2. Pinning information
Table 1: Pinning - SOT186A (TO-220F) simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
isolated
Symbol
d
g
mbb076
s
1 2 3 MBK110
SOT186A (TO-220F)
1 page  
Philips Semiconductors
PHX27NQ11T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 10 V; ID = 14 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 27 A; VDD = 80 V; VGS = 10 V;
Figure 13
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 50 V; RL = 1.8 Ω;
VGS = 10 V; RG = 5.6 Ω
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain (diode forward) voltage IS = 14 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 14 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
110 - - V
99 - - V
234V
1- - V
- - 4.4 V
- - 10 µA
- - 500 µA
- 10 100 nA
- 40 50 mΩ
- 108 135 mΩ
- 30 - nC
- 6 - nC
- 12 - nC
- 1240 - pF
- 170 - pF
- 100 - pF
- 12 - ns
- 43 - ns
- 32 - ns
- 24 - ns
- 0.9 1.5 V
- 60 - ns
- 160 - nC
9397 750 13178
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
PHX27NQ11T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
10. Data sheet status
Level Data sheet status[1]
I Objective data
Product status[2][3]
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
9397 750 13178
Product data
Rev. 01 — 14 May 2004
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PHX27NQ11T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHX27NQ11T | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |