BUK9Y40-55B Datasheet PDF - NXP Semiconductors
| Part Number | BUK9Y40-55B | |
| Description | N-channel TrenchMOS logic level FET | |
| Manufacturers | NXP Semiconductors | |
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BUK9Y40-55B
N-channel TrenchMOS™ logic level FET
M3D748 Rev. 01 — 28 May 2004
www.DataSheet4U.com
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 48 mJ
s ID ≤ 20 A
s RDSon = 34 mΩ (typ)
s Ptot ≤ 50 W.
2. Pinning information
Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
mb
mb mounting base,
connected to
drain (d)
Symbol
d
g
1234
Top view MBL286
SOT669 (LFPAK)
MBL798
s1 s2 s3
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Philips Semiconductors
www.DataSheet4U.com
BUK9Y40-55B
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 15 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 15 A
VGS = 10 V; ID = 15 A
Qg(tot)
total gate charge
Qgs gate-to-source charge
Qgd gate-to-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VGS = 5 V; VDD = 44 V;
ID = 15 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 2.2 Ω;
VGS = 5 V; RG = 10 Ω
VSD source-drain (diode forward) IS = 20 A; VGS = 0 V;
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
Qr recovered charge
VGS = −10 V; VDS = 30 V
Min
55
50
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--V
--V
1.5 2
--
- 2.3
0.02 1
- 500
2 100
V
V
V
µA
µA
nA
34 40 mΩ
- 84 mΩ
- 45 mΩ
32 36 mΩ
11 -
nC
2-
nC
5-
nC
765
1 020
pF
123 148 pF
71 97 pF
17 -
ns
93 -
ns
35 -
ns
72 -
ns
0.85 1.2
45 -
25 -
V
ns
nC
9397 750 13189
Product data
Rev. 01 — 28 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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