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Número de pieza | DIM800DDS12-A000 | |
Descripción | Dual Switch IGBT Module | |
Fabricantes | Dynex Semiconductor | |
Logotipo | ||
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No Preview Available ! FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• Lead Free construction
APPLICATIONS
• High Power Inverters
• Motor Controllers
DIM800DDS12-A000
Dual Switch IGBT Module
DS5540-2.2 June 2005 (LN24051)
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.2V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DDS12-A000 is a dual switch 1200V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DDS12-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
1 page SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EO
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125° C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM800DDS12-A000
Test Conditions
IC = 800A
VGE = ±15V
VCE =600V
RG(ON) = RG(OFF) = 2.7Ω
L ∼ 100nH
IF = 800A, VR = 600V,
dlF/dt = 4200A/µs
Min. Typ. Max. Units
- 1250 -
ns
- 170 - ns
- 130 - mJ
- 250 - ns
- 250 - ns
- 80 - mJ
- 9 - µC
- 80 - µC
- 380 - A
- 30 - mJ
Test Conditions
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 2.7Ω
L ∼ 100nH
IF = 800A, VR = 600V,
dlF/dt = 4000A/µs
Min. Typ. Max. Units
- 1500 -
ns
- 200 - ns
- 160 - mJ
- 400 - ns
- 220 - ns
- 120 - mJ
- 160 - µC
- 450 - A
- 60 - mJ
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet DIM800DDS12-A000.PDF ] |
Número de pieza | Descripción | Fabricantes |
DIM800DDS12-A000 | Dual Switch IGBT Module | Dynex Semiconductor |
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