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PDF PBSS4160U Data sheet ( Hoja de datos )
| Número de pieza | PBSS4160U | |
| Descripción | 1A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 23 April 2004
Objective data sheet
1. Product profile
1.1 General description
NPN low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package.
PNP complement: PBSS5160U.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency leading to less heat generation
s Reduces printed-circuit board area required
s Cost-effective replacement of medium power transistors BCP55 and BCX55.
1.3 Applications
s Major application segments
x Automotive
x Telecom infrastructure
x Industrial.
s Power management
x DC-to-DC conversion
x Supply line switching.
s Peripheral driver
x Inductive load driver (e.g. relays, buzzers and motors)
x Driver in low voltage applications (e.g. lamps, and LEDs).
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 60 V
- - 1A
- - 2A
- - 280 mΩ
1 page  
Philips Semiconductors
8. Package outline
Plastic surface mounted package; 3 leads
DB
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PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp
Q
v
w
mm 1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT323
IEC
Fig 1. Package outline.
9397 750 12886
Objective data sheet
REFERENCES
JEDEC
EIAJ
SC-70
Rev. 01 — 23 April 2004
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PBSS4160U.PDF ] | |
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