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부품번호 | PBSS4160K 기능 |
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기능 | 1 A NPN low VCEsat (BISS) transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 29 April 2004
Objective data sheet
1. Product profile
1.1 General description
NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement:
PBSS5160K.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency leading to less heat generation
s Reduces printed-circuit board area required
s Cost effective replacement of medium power transistor BCP55 and BCX55.
1.3 Applications
s Major application segments
x Automotive 42 V power
x Telecom infrastructure
x Industrial
s Power management
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Driver in low supply voltage applications, e.g. lamps and LEDs
x Inductive load driver, e.g. relays, buzzers and motors.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 60 V
- - 1A
- - 2A
- - 280 mΩ
Philips Semiconductors
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PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient in free air
Typ
[1] 500
[2] 294
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a ceramic circuit board, Al2O3, standard footprint.
Unit
K/W
K/W
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
10
(9)
(10)
1
001aaa824
10−1
10−5
10−4
10−3
10−2
10−1
1
10
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
102 103
tp (s)
9397 750 12702
Objective data sheet
Rev. 01 — 29 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 12
4페이지 Philips Semiconductors
www.DataSheet4U.com
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
10
VCEsat
(V)
1
001aaa826
1.2
VBEsat
(V)
0.8
mle134
(1)
(2)
(3)
10−1
(1)
(2)
10−2
10−1
1
(3)
10 102
103 104
IC (mA)
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values.
0.4
0
10−1
1
10 102 103 104
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values.
9397 750 12702
Objective data sheet
Rev. 01 — 29 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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