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PDF BUK664R6-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK664R6-40C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK664R6-40C
www.DataSheet4U.com
N-channel TrenchMOS intermediate level FET
Rev. 01 — 21 May 2010
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12
Min Typ Max Unit
- - 40 V
[1] - - 80 A
- - 158 W
- 3.6 4.6 mΩ
1 page  
NXP Semiconductors
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BUK664R6-40C
N-channel TrenchMOS intermediate level FET
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
003aae316
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
V DS (V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 5
vertical in free air
Min Typ Max Unit
- - 0.95 K/W
- 60 - K/W
10
Zth (j-mb)
(K/W)
1
10-1
10-2
δ = 0.5
0.2
0.1
0.05
0.02
single shot
003aad070
P δ = tp
T
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK664R6-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 21 May 2010
© NXP B.V. 2010. All rights reserved.
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BUK664R6-40C
N-channel TrenchMOS intermediate level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK664R6-40C v.1
20100521
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
BUK664R6-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 21 May 2010
© NXP B.V. 2010. All rights reserved.
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