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부품번호 | BUK6E3R4-40C 기능 |
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기능 | N-channel TrenchMOS intermediate level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BUK6E3R4-40C
www.DataSheet4U.com
N-channel TrenchMOS intermediate level FET
Rev. 01 — 17 May 2010
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 204 W
- 2.9 3.4 mΩ
NXP Semiconductors
200
ID
(A)
150
003aad044
100
(1)
50
0
0 50 100 150 200
Tmb (°C)
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BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
IAL
(A)
102
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae341
(1)
10
(2)
1
(3)
10-1
10-3
10-2
10-1
1 tAL (ms) 10
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK6E3R4-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 17 May 2010
© NXP B.V. 2010. All rights reserved.
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BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
- 0.8 1.2 V
- 48 - ns
- 82 - nC
150
gfs
(S)
120
90
60
30
0
0
003aae331
20 40 60 80
ID (A)
100
ID
(A)
80
60
40
20
0
0
Tj = 175 °C
2
003aae333
Tj = 25 °C
4 VGS (V) 6
Fig 6. Forward transconductance as a function of
drain current; typical values
12
RDSon
(mΩ)
10
003aac998
8
6
4
2
0
0 5 10 15
VGS (V)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
4
VGS(th)
(V)
3
2
max
typ
min
003aad805
1
0
-60 0 60 120 180
Tj (°C)
Fig 8. Drain-source on-state resistance as a function Fig 9. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
BUK6E3R4-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 17 May 2010
© NXP B.V. 2010. All rights reserved.
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