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부품번호 MWE6IC9080GNR1 기능
기능 RF LDMOS Wideband Integrated Power Amplifiers
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MWE6IC9080GNR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
www.DRaetavS.he0e,t44U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Typical GSM
630 mA, Pout
P=e8r0foWrmaattnsceC:WVDD
=
28
Volts,
IDQ1
=
230
mA,
IDQ2
=
Frequency
Gps
(dB)
PAE
(%)
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
29.0 49.7
940 MHz
28.8 51.6
960 MHz
28.5 52.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
Typical Pout @ 1 dB Compression Point 90 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
920 MHz 30.0 37.0
940 MHz 30.0 37.8
960 MHz 29.5 38.0
Features
--62
--62
--62
--75 0.8
--75 1.2
--75 1.5
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
VVGGSS12
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1




MWE6IC9080GNR1 pdf, 반도체, 판매, 대치품
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
www.DataSheet4U.com
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35 W Avg., IDQ1 =
230 mA, IDQ2 = 630 mA, 920--960 MHz EDGE Modulation
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz
30.0 37.0
--62
--75 0.8
940 MHz
30.0 37.8
--62
--75 1.2
960 MHz
29.5 38.0
--62
--75 1.5
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
4
RF Device Data
Freescale Semiconductor

4페이지










MWE6IC9080GNR1 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
6
VDD = 28 Vdc
5
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
4
Pout = 60 W Avg.
3
50 W Avg.
2
1 35 W Avg.
0
880 900 920 940 960
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
980
--50
--55
VDD = 28 Vdc
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
--60
--65
960 MHz
940 MHz
--70
920 MHz
--75
--80
--85
0 20 40 60 80 100
Pout, OUTPUT POWER (WATTS)
Figure 10. Spectral Regrowth at 600 kHz
versus Output Power
120
--40
VDD = 28 Vdc
--45 IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
--50
960 MHz
--55
920 MHz
--60
--65
940 MHz
--70
--75
0 20 40 60 80 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Spectral Regrowth at 400 kHz
versus Output Power
120
10
VDD = 28 Vdc
8
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
60
48
6 960 MHz
36
960 MHz
4
940 MHz
940 MHz
24
2
ηD 920 MHz
920 MHz
12
EVM
00
1 10 100 300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. EVM and Drain Efficiency
versus Output Power
36 0
30
Gain
24
--5
--10
18 --15
12 --20
6
IRL
VDD = 28 Vdc
Pin = 0 dBm --25
IDQ1 = 230 mA
0 IDQ2 = 630 mA --30
750 800 850 900 950 1000 1050 1100 1150
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
7

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부품번호상세설명 및 기능제조사
MWE6IC9080GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Freescale Semiconductor

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