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부품번호 | MMG3005NT1 기능 |
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기능 | Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 20 페이지수
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3005NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small- signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 800 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small - signal RF.
Features
• Frequency: 800 - 2200 MHz
• P1dB: 30 dBm @ 2140 MHz
• Small - Signal Gain: 15 dB @ 2140 MHz
• Third Order Output Intercept Point: 47 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Document Number: MMG3005NT1
www.DRaetavS.he5e,t44U/.2co0m08
MMG3005NT1
800 - 2200 MHz, 15 dB
30 dBm
InGaP HBT
CASE 1543 - 03
PQFN 5x5
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol 900 1960
MHz MHz
Small - Signal Gain
(S21)
Gp 18.5 15.5
Input Return Loss
(S11)
IRL - 14 - 10
Output Return Loss
(S22)
ORL
- 12 - 7
Power Output @1dB P1db 30 30
Compression
Third Order Output
Intercept Point
IP3 47 47
1. VDC = 5 Vdc, TC = 25°C, 50 ohm system
2140
MHz
15
- 11
-7
30
47
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VDC 6 V
Supply Current
IDC 600 mA
RF Input Power
Pin 18 dBm
Storage Temperature Range
Tstg - 65 to +150 °C
Junction Temperature (2)
TJ 150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 480 mA, TC = 25°C)
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
RθJC
21.5
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3005NT1
1
50 OHM TYPICAL CHARACTERISTICS
www.DataSheet4U.com
600 106
480
105
360
240
120
VCC = 5 Vdc
0
0 1 2 3 45
VBA, BIAS VOLTAGE (V)
Figure 2. Collector Current versus Bias Voltage
104
103
120 125 130 135 140
145 150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 480 mA
Figure 3. MTTF versus Junction Temperature
MMG3005NT1
4
RF Device Data
Freescale Semiconductor
4페이지 50 OHM TYPICAL CHARACTERISTICS: 900 MHz
www.DataSheet4U.com
20 −10
19 TC = −40°C
−11
18 85°C
25°C
17
16
VDC = 5 Vdc
15
840 870 900 930 960
f, FREQUENCY (MHz)
Figure 6. Small - Signal Gain (S21) versus
Frequency
−12
85°C
−13
25°C
TC = −40°C
−14
VDC = 5 Vdc
−15
840 870
900
f, FREQUENCY (MHz)
930
Figure 7. Input Return Loss (S11) versus
Frequency
960
−5
−7
−9
TC = −40°C
−11
−13 25°C
VDC = 5 Vdc
−15
85°C
840 870 900 930 960
f, FREQUENCY (MHz)
Figure 8. Output Return Loss (S22) versus
Frequency
50
48 TC = −40°C
25°C
46
85°C
44
42
VDC = 5 Vdc
1 MHz Tone Spacing
40
840 870
900
930
f, FREQUENCY (MHz)
Figure 10. Third Order Output Intercept
Point versus Frequency
960
32
31
TC = −40°C
30
85°C
25°C
29
VDC = 5 Vdc
28
840
870 900 930
f, FREQUENCY (MHz)
Figure 9. P1dB versus Frequency
960
10
8
TC = 85°C
6
−40°C
4 25°C
2
VDC = 5 Vdc
0
840 870
900 930
960
f, FREQUENCY (MHz)
Figure 11. Noise Figure versus Frequency
RF Device Data
Freescale Semiconductor
MMG3005NT1
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MMG3005NT1 | Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier | Freescale Semiconductor |
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