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부품번호 | PBSS4021NZ 기능 |
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기능 | 8 A NPN low VCEsat (BISS) transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 6 A;
IB = 600 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 20 V
- - 8A
- - 20 A
[1] -
14 20 mΩ
NXP Semiconductors
www.DataSheet4U.com
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 160 K/W
[2] - - 75 K/W
[3] - - 50 K/W
- - 11 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0
0.01
006aac061
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4021NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
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PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
1000
hFE
800
600
006aac064
(1)
(2)
400
(3)
200
0
10−1
1
10 102 103 104 105
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
0.8
006aac066
(1)
(2)
0.4
(3)
25.0
IC
(A)
20.0
15.0
10.0
5.0
006aac065
IB (mA) = 70
56
42
28
14
63
49
35
21
7
0.0
0.0 1.0 2.0 3.0 4.0 5.0
VCE (V)
Tamb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.4
VBEsat
(V)
1.0
006aac067
(1)
(2)
0.6
(3)
0.0
10−1
1
10 102 103 104 105
IC (mA)
0.2
10−1
1
10 102 103 104 105
IC (A)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4021NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4021NZ | 8 A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
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