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PDF BF1218 Data sheet ( Hoja de datos )
| Número de pieza | BF1218 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1218
Dual N-channel dual gate MOSFET
Rev. 01 — 14 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during Automatic Gain Control (AGC).
Integrated diodes between the gates and source protect against excessive input voltage
surges. The transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
digital and analog television tuners
professional communication equipment
1 page  
NXP Semiconductors
www.DataSheet4U.com
BF1218
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
8
(4)
4
(5)
(6)
001aag356
(1)
(2)
(3)
0
012345
VGG (V)
(1) ID(B); RG1 = 68 k.
(2) ID(B); RG1 = 86 k.
(3) ID(B); RG1 = 100 k.
(4) ID(A); RG1 = 100 k.
(5) ID(A); RG1 = 86 k.
(6) ID(A); RG1 = 68 k.
Fig 2. Drain currents of MOSFET A and B as a
function of VGG
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for amplifier A
Table 8. Dynamic characteristics for amplifier A[1]
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
f = 100 MHz; Tj = 25 C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
26
[2] -
[2] -
[2] -
[2] -
Gtr transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
24
NF noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
f = 400 MHz; YS = YS(opt)
-
f = 800 MHz; YS = YS(opt)
-
Typ
31
2.1
3.4
0.8
20
36
32
28
3.0
0.9
1.1
Max Unit
41 mS
2.6 pF
- pF
- pF
- fF
40 dB
36 dB
33 dB
- dB
1.5 dB
1.7 dB
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 23
5 Page 
NXP Semiconductors
www.DataSheet4U.com
BF1218
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 11. Dynamic characteristics for amplifier B[1]
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance f = 100 MHz; Tj = 25 C
input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance
f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
cross modulation
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
25
[2] -
[2] -
[2] -
[2] -
30
2.1
3.4
0.85
20
31
28
26
-
-
-
[3]
35
32
30
3
1.1
1.4
90 -
at 10 dB AGC
- 90
at 20 dB AGC
- 98
at 40 dB AGC
102 105
Max Unit
40 mS
2.6 pF
- pF
- pF
- fF
39 dB
36 dB
34 dB
- dB
1.7 dB
2.0 dB
- dBV
- dBV
- dBV
- dBV
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Calculated from S-parameters.
[3] Measured in Figure 34 test circuit.
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
11 of 23
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| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet BF1218.PDF ] | |
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