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A8735 데이터시트 PDF




Allegro Micro Systems에서 제조한 전자 부품 A8735은 전자 산업 및 응용 분야에서
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부품번호 A8735 기능
기능 Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger
제조업체 Allegro Micro Systems
로고 Allegro Micro Systems 로고


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A8735 데이터시트, 핀배열, 회로
A8735www.DataSheet4U.com
Ultra Small Mobile Phone Xenon Photoflash
Capacitor Charger with IGBT Driver
Features and Benefits
Ultra small 2 × 2 DFN/MLP-8 package
Low quiescent current draw (0.5 μA max. in shutdown mode)
Primary-side output voltage sensing; no resistor divider required
Fixed 1 A peak current limit
1V logic (VHI(min)) compatibility
Integrated IGBT driver with internal gate resistors
Optimized for mobile phone, 1-cell Li+ battery applications
Zero-voltage switching for lower loss
>75% efficiency
Charge complete indication
Integrated 50 V DMOS switch with self-clamping protection
Package: 8-pin DFN/MLP (suffix EE)
Description
TheAllegro®A8735 is a Xenon photoflash charger IC designed
to meet the needs of ultra low power, small form factor cameras,
particularly camera phones. By using primary-side voltage
sensing, the need for a secondary-side resistive voltage divider
is eliminated.This has the additional benefit of reducing leakage
currents on the secondary side of the transformer. To extend
battery life, the A8735 features very low supply current draw
(0.5 μA max in shutdown mode). The IGBT driver also has
internal gate resistors for minimum external component count.
The charge and trigger voltage logic thresholds are set at 1
VHI(min) to support applications implementing low-voltage
control logic.
The A8735 is available in an 8-contact 2 mm × 2 mm
DFN/MLP package with a 0.60 maximum overall package
height, and an exposed pad for enhanced thermal performance.
It is lead (Pb) free with 100% matte tin leadframe plating.
Not to scale
2 mm × 2 mm, 0.60 mm height
Typical Applications
VIN_VDRV
C2
CHARGE
TRIG
Battery Input +
2.3 to 5.5 V
C1
VBAT
VOUT Detect
SW
Control
Block
ISW sense
COUT
100F
315 V
VPULLUP
DONE
100 kΩ
DONE
VIN_VDRV
IGBT Driver
IGBT Gate
GATE
VIN_VDRV
C2
CHARGE
TRIG
Battery Input +
1.5 to 5.5 V
C1
VBAT
VOUT Detect
SW
Control
Block
ISW sense
COUT
100F
315 V
VPULLUP
DONE
100 kΩ
DONE
VIN_VDRV
IGBT Driver
IGBT Gate
GATE
GND
(A)
GND
(B)
Figure 1. Typical applications: (A) with single battery supply and (B) with separate bias supply
8735-DS




A8735 pdf, 반도체, 판매, 대치품
A8735
Ultra Small Mobile Phone Xenon Photoflashwww.DataSheet4U.com
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS Typical values are valid at VIN = VBAT = 3.6 V; TA = 25°C, except
guaranteed from 40°C to 85°C ambient, unless otherwise noted
Characteristics
VBAT Voltage Range1
VIN_DRV Voltage Range1
UVLO Enable Threshold
UVLO Hysteresis
VIN Supply Current
VBAT Pin Supply Current
Current Limit
Primary-Side Current Limit2
Switch On-Resistance
Switch Leakage Current1
CHARGE Input Current
CHARGE Input Voltage1
Symbol
VBAT
VIN
VINUV
VINUV(hys)
IIN
IBAT
Test Conditions
VIN rising
Shutdown (CHARGE = 0 V, TRIG = 0 V)
Charging complete
Charging (CHARGE = VIN, TRIG = 0 V)
Shutdown (CHARGE = 0 V, TRIG = 0 V)
Charging
¯D¯¯O¯¯N¯¯E¯ =
done
0 V)
(CHARGE
=
VIN,
Charging (CHARGE = VIN, TRIG = 0 V)
ISWLIM
RSWDS(on)
ISWLK
ICHARGE
VCHARGE
VIN_DRV = 3.6 V, ID = 600 mA, TA = 25°C
VSW = 5.5, over full temperature range
VCHARGE = VIN
High, over input supply range
Low, over input supply range
CHARGE On/Off Delay
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage3
Output Comparator Voltage Overdrive
¯D¯¯O¯¯N¯¯E¯ Output Leakage Current1
¯D¯¯O¯¯N¯¯E¯ Output Low Voltage1
dV/dt Threshold for ZVS Comparator
tCH
toff(max)
ton(max)
VOUTTRIP
VOUTOV
IDONELK
VDONEL
dV/dt
Time between CHARGE = 1 and charging
enabled
Measured as VSW – VBAT
Pulse width = 200 ns (90% to 90%)
32 μA into ¯D¯¯O¯¯N¯¯E¯ pin
Measured at SW pin
IGBT Driver
TRIG Input Voltage1
VTRIG(H)
VTRIG(L)
Input = logic high, over input supply range
Input = logic low, over input supply range
TRIG Pull-Down Resistor
RTRIGPD
GATE Resistance to VIN_DRV
RSrcDS(on) VGATE = 1.8 V
GATE Resistance to GND
RSnkDS(on) VGATE = 1.8 V
Propagation Delay (Rising)4,5
tDr
Measurement taken at ¯D¯¯O¯¯N¯¯E¯ pin,
CL= 6500 pF
Propagation Delay (Falling)4,5
tDf
Output Rise Time4,5
tr
Output Fall Time4,5
tf
GATE Pull-Down Resistor
RGTPD
1Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization.
2Current limit guaranteed by design and correlation to static test.
3Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization.
4Guaranteed by design and characterization.
5See IGBT Drive Timing Definition diagram for further information.
indicates specifications
Min. Typ. Max. Unit
1.5 – 5.5 V
2.3 – 5.5 V
– 2.05 2.2 V
– 150 – mV
– 0.02 0.5 μA
– 50 100 μA
– 2 – mA
– 0.01 1
μA
– – 5 μA
– – 50 μA
0.9 1.0 1.1
A
– 0.4 –
Ω
– – 2 μA
– 36 – μA
1.0 – – V
– – 0.4 V
– 20 – us
– 18 –
– 18 –
31.0 31.5 32.0
– 200 400
μs
μs
V
mV
1 μA
– – 100 mV
– 20 – V/μs
1–– V
– – 0.4 V
– 100 –
kΩ
– 21 –
Ω
– 27 –
Ω
– 25 – ns
– 60 –
– 290 –
– 380 –
– 20 –
ns
ns
ns
kΩ
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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A8735 전자부품, 판매, 대치품
A8735
Ultra Small Mobile Phone Xenon Photoflashwww.DataSheet4U.com
Capacitor Charger with IGBT Driver
Characteristic Performance
Charge Time versus Battery Voltage
Transformer LPRIMARY = 12.8 μH, N =10.25, VIN =3.6 V, COUT = 100 μF / 330 V UCC, at room temperature
20
18
16
14
12
10
8
6
4
2
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Battery Voltage (V)
Efficiency versus Battery Voltage
Transformer LPRIMARY = 12.8 μH, N =10.25, VIN =3.6 V, at room temperature
86%
84%
82%
80%
78%
76%
74%
72%
70%
68%
66%
64%
62%
60%
58%
56%
54%
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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