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Número de pieza | EID1515-10 | |
Descripción | 15.35-15.75 GHz 10-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID1515-10 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED 12/21/2006
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EID1515-10
15.35-15.75 GHz 10-Watt Internally Matched Power FET
FEATURES
• 15.35– 15.75GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.0 dBm Output Power at 1dB Compression
• 5.5 dB Power Gain at 1dB Compression
• 20% Power Added Efficiency
• Hermetic Metal Flange Package
.827±.010 .669
Excelics
EID1515-10
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 15.35-15.75GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 15.35-15.75GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 15.35-15.75GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 15.35-15.75GHz
Id1dB
Drain Current at 1dB Compression
f = 15.35-15.75GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance2
Note:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
39.0
4.5
TYP
40.0
5.5
22
3500
5000
-1.0
2.5
MAX
±0.6
4500
7500
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
MAXIMUM RATING1,2 (Ta = 25°C)
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
VGS
Igsf
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
15V
-5V
120mA
Igsr
Reverse Gate Current
-18mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
39.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
50W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-3V
40mA
-6mA
@ 3dB Compression
175 oC
-65 to +175 oC
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2006
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID1515-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1515-10 | 15.35-15.75 GHz 10-Watt Internally Matched Power FET | Excelics Semiconductor |
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