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PDF AOB405 Data sheet ( Hoja de datos )
| Número de pieza | AOB405 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOB405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB405 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2PAK package, this device is well suited for
high current load applications. Standard Product
AOB405 is Pb-free (meets ROHS & Sony 259
specifications). AOB405L is a Green Product ordering
option. AOB405 and AOB405L are electrically
identical.
Features
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 48mΩ (VGS = -10V)
RDS(ON) < 72mΩ (VGS = -4.5V)
TO-263
D2-PAK
Top View
Drain Connected to
Tab
GDS
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C G
TA=100°C G
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-12
-12
-30
-12
30
50
25
2.3
1.5
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
11
45
2.5
Max
16
54
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page  
AOB405
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14 60
12
tIDA=-=10BmVLA,−⋅ VIVDGDSD=0V
50
40
10 30
8 TA=25°C
20
10
6
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
14
12
10
8
6
4
2
0
0
10
1
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
60
50 TA=25°C
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=54°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOB405.PDF ] | |
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