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부품번호 | PBSS4620PA 기능 |
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기능 | 6A NPN Low V_CEsat (BISS) Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PBSS4620PA
20 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 May 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5620PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 20 V
- - 6A
- - 7A
[1] -
33 46 mΩ
NXP Semiconductors
www.DataSheet4U.com
PBSS4620PA
20 V, 6 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab979
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab980
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
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PBSS4620PA
20 V, 6 A NPN low VCEsat (BISS) transistor
800
hFE
600
400
200
006aac120
(1)
(2)
(3)
0
10−1
1
10 102 103 104
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
0.8
006aac122
(1)
(2)
(3)
0.4
8
IC
(A)
6
4
2
0
0.0 1.0
Tamb = 25 °C
006aac121
IB (mA) = 20
16
12
8
4
18
14
10
6
2
2.0 3.0 4.0 5.0
VCE (V)
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
1.2
VBEsat
(V)
0.8
006aac123
(1)
(2)
(3)
0.4
0.0
10−1
1
10 102 103 104
IC (mA)
0.0
10−1
1
10 102 103 104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
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PBSS4620PA | 6A NPN Low V_CEsat (BISS) Transistor | NXP Semiconductors |
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