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PDF BUK9C10-65BIT Data sheet ( Hoja de datos )

Número de pieza BUK9C10-65BIT
Descripción N-channel TrenchPLUS logic level FET
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BUK9C10-65BIT Hoja de datos, Descripción, Manual

BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
Rev. 02 — 21 June 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in SOT427. Device is
manufactured using NXP High-Performance TrenchPLUS technology, featuring very low
on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
AEC-Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 13;
see Figure 12
ID/Isense
ratio of drain
current to sense
current
Tj = 25 °C; VGS = 5 V;
see Figure 14
V(BR)DSS
drain-source
breakdown
voltage
ID = 250 µA; VGS = 0 V;
Tj = 25 °C
Min Typ Max Unit
- 8.5 10 m
8094 8993 9892 A/A
65 - - V

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BUK9C10-65BIT pdf
NXP Semiconductors
www.DataSheet4U.com
BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
101
102
1
001aal754
tp = 10 μs
100 μs
DC
1 ms
10 ms
100 ms
10 102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 5
Min Typ Max Unit
- - 0.73 K/W
- 61 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
101 0.1
0.05
0.02
102 single shot
001aal530
P
tp
δ=
T
103
106
105
104
103
102
101
tp
T
tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9C10-65BIT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
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BUK9C10-65BIT arduino
NXP Semiconductors
www.DataSheet4U.com
BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped)
SOT427
E
D1
D
HD
4
17
e e eee e
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 b
c
D
max.
D1
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
E
10.30
9.70
e
1.27
Lp HD
Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT427
IEC
REFERENCES
JEDEC
JEITA
Fig 19. Package outline SOT427 (D2PAK)
EUROPEAN
PROJECTION
ISSUE DATE
05-03-09
06-03-16
BUK9C10-65BIT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
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