BLF7G20L-200 Datasheet PDF - NXP Semiconductors
| Part Number | BLF7G20L-200 | |
| Description | Power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLF7G20L-200;
BLF7G20LS-200
Power LDMOS transistor
Rev. 01 — 3 June 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33 −29[1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1990 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low-memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi-carrier applications in the
1805 MHz to 1990 MHz frequency range
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NXP Semiconductors
www.DataSheet4U.com
BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
19
Gp
(dB)
18
17
16
7.3 1-carrier W-CDMA
014aab191 50
ηD
(%)
40
Gp
30
ηD
20
8
PAR
(dB)
6
4
014aab192
(3)
(2)
(1)
15
0
10
40 80 120 160
PL(AV) (W)
2
0 100 200 300 400
PL(M) (W)
Fig 3.
VDS = 28 V; IDq = 1620 mA; f = 1845 MHz; PAR = 7.2 dB
at 0.01 % probability on the CCDF.
Power gain and drain efficiency as functions
of average output power; typical values
VDS = 28 V; IDq = 1620 mA; PAR = 7.2 dB at 0.01 %
probability on the CCDF.
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
Fig 4. Peak-to-average power ratio as a function of
peak power; typical values
−20
APCR5M
(dBc)
−30
014aab193
−40 (1)
(2)
(3)
−50
−60
0
40 80 120 160
PL(AV) (W)
VDS = 28 V; IDq = 1620 mA; PAR = 7.2 dB at 0.01 % probability on the CCDF.
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
Fig 5. Adjacent power channel ratio (5 MHz) as function of average output power; typical values
BLF7G20L-200_7G20LS-200
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 June 2010
© NXP B.V. 2010. All rights reserved.
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